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公开(公告)号:US20180033612A1
公开(公告)日:2018-02-01
申请号:US15641454
申请日:2017-07-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hye Kyoung LEE , Il Yong JANG , Hwan Seok SEO , Byung Gook KIM
IPC: H01L21/027 , G03F7/00 , G03F1/32 , G03F1/58 , H01L21/033 , G03F1/00
CPC classification number: G03F1/32 , G03F1/0069 , G03F1/34 , G03F1/58 , G03F7/001 , H01L21/0274 , H01L21/0337
Abstract: A mask blank includes: a light transmitting substrate; a first layer disposed on the light transmitting substrate, and including a chromium compound that contains chromium and at least one element selected from oxygen, nitrogen, and carbon; and a second layer disposed on the first layer as an outermost layer from among the first and second layers, and including a silicon compound that contains silicon and at least one element selected from oxygen, nitrogen, and carbon, an alloy of a transition metal and silicon, or a transition metal and silicon compound that contains a transition metal, silicon, and at least one element selected from oxygen, nitrogen, and carbon. The thickness of the first layer is 45 nm or less, and the thickness of the second layer is 5 nm or greater. An optical density of a stack composed of the first layer and the second layer is 3 or greater.
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2.
公开(公告)号:US20190179225A1
公开(公告)日:2019-06-13
申请号:US16016779
申请日:2018-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hwan Seok SEO , Myoung Soo LEE , Byung Hoon LEE
Abstract: A photomask is provided. The photomask comprises: a low thermal expansion material (LTEM) substrate including a first surface and a second surface; a reflective layer disposed on the first surface of the low thermal expansion material substrate and including first material layers and second material layers, which are stacked alternately; a light absorbing pattern on the reflective layer; and a conductive layer on the second surface of the low thermal expansion material substrate, wherein the low thermal expansion material substrate includes a correction defect correcting the light absorbing pattern, and the conductive layer is one of ruthenium oxide (RuO2), iridium oxide (IrO2), and/or a combination thereof.
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