公开(公告)号：US20190096479A1

公开(公告)日：2019-03-28

申请号：US15922967

申请日：2018-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHUNG-HO YU ,  DAE-SEOK BYEON ,  JIN-BAE BANG ,  CHEON-AN LEE

IPC: G11C11/56 ,  G11C16/24 ,  G11C16/26

CPC classification number: G11C11/5642 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/26 ,  G11C16/32 ,  G11C2211/5642

Abstract: A nonvolatile memory device includes multi-level cells. A sensing method of the nonvolatile memory device includes: precharging a bit line and a sense-out node during a first precharge interval; identifying a first state of a selected memory cell, by developing the sense-out node during a first develop time and sensing a first voltage level of the sense-out node; precharging the sense-out node to a second sense-out precharge voltage; and identifying the first state of the selected memory cell from a second state adjacent thereto, by developing the sense-out node during a second develop time different from the first develop time and sensing a second voltage level of the sense-out node.

公开(公告)号：US20160352223A1

公开(公告)日：2016-12-01

申请号：US14996248

申请日：2016-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GYO-SOO CHOO ,  PIL-SEON YOO ,  DUK-MIN KWON ,  CHUNG-HO YU

IPC: H02M3/156 ,  H03F3/16 ,  H03F1/30

CPC classification number: H03F1/301 ,  G05F1/463 ,  G05F1/56 ,  G05F1/563 ,  G05F1/567 ,  G05F3/245 ,  G11C5/147 ,  G11C7/04 ,  G11C16/30 ,  H03F2200/447 ,  H03F2200/468

Abstract: A variable voltage generation circuit includes a first amplification circuit and a second amplification circuit. The first amplification circuit generates a first output voltage based on a reference voltage, a first feedback voltage, a temperature-varied voltage and a temperature-fixed voltage such that the first output voltage is varied in a first voltage range according to a variation of the operational temperature. The first amplification circuit generates the first feedback voltage based on the first output voltage. The second amplification circuit generates a second output voltage based on the first feedback voltage, a second feedback voltage, the temperature-varied voltage and the temperature-fixed voltage such that the second output voltage is varied in a second voltage range wider than the first voltage range according to the variation of the operational temperature. The second amplification circuit generates the second feedback voltage based on the second output voltage.

Abstract translation: 可变电压生成电路包括第一放大电路和第二放大电路。 第一放大电路基于参考电压，第一反馈电压，温度变化电压和温度固定电压产生第一输出电压，使得第一输出电压根据第一放大电路的变化在第一电压范围内变化 工作温度。 第一放大电路基于第一输出电压产生第一反馈电压。 第二放大电路基于第一反馈电压，第二反馈电压，温度变化电压和温度固定电压产生第二输出电压，使得第二输出电压在比第一电压更宽的第二电压范围内变化 范围根据工作温度的变化。 第二放大电路基于第二输出电压产生第二反馈电压。

公开(公告)号：US20230170299A1

公开(公告)日：2023-06-01

申请号：US17979179

申请日：2022-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： SUNG-MIN JOE ,  SANG SOO PARK ,  CHUNG-HO YU

IPC: H01L23/528 ,  H01L27/11582 ,  G11C16/04 ,  G11C16/26

CPC classification number: H01L23/528 ,  G11C16/26 ,  G11C16/0483 ,  H01L27/11582

Abstract: A memory device includes a substrate, a first cell string, second cell string, and third cell string, each connected to a first bit line and formed in a direction perpendicular to a top surface of the substrate, a first upper ground selection line connected to the first cell string, a second upper ground selection line separated from the first upper ground selection line and connected to the second and third cell strings, a first lower ground selection line connected to the first and second cell strings, and a second lower ground selection line separated from the first lower ground selection line and connected to the third cell string.