公开(公告)号：US09927950B2

公开(公告)日：2018-03-27

申请号：US14821341

申请日：2015-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan-ho Park ,  Kyoung-nyo Hwangbo ,  Mi-kyoung Kim

IPC: G06F3/048 ,  G06F3/0481 ,  G06F3/0484 ,  G06F3/0482 ,  G06F3/0485 ,  G11B27/10 ,  G11B27/34 ,  G06F3/0486 ,  G06F3/0488

CPC classification number: G06F3/04817 ,  G06F3/0482 ,  G06F3/0484 ,  G06F3/04842 ,  G06F3/04847 ,  G06F3/04855 ,  G06F3/0486 ,  G06F3/0488 ,  G11B27/105 ,  G11B27/34

Abstract: A method for providing a graphical user interface (GUI) to receive a user command on a touch screen, and a multimedia apparatus using the same. The method for providing a GUI includes determining whether an enlargement command for a GUI item is received, and enlarging the GUI item. Therefore, it is possible to enable a user to operate the GUI item more correctly, and to provide the superior visual effect when the GUI item is operated.

公开(公告)号：US09661431B2

公开(公告)日：2017-05-23

申请号：US15084708

申请日：2016-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan-ho Park ,  Kyeong-chae Lim

IPC: H04R29/00 ,  G06F3/16 ,  H04R5/04

CPC classification number: H04R29/001 ,  G06F3/165 ,  H04R5/04 ,  H04S7/00 ,  H04S7/303 ,  H04S2420/01

Abstract: An audio device and a position recognition method of the audio device are disclosed. According to an example embodiment, an audio device includes at least one infrared (IR) transceiver and a controller configured to recognize whether the audio device is positioned to a left or right of another audio device in response to a signal received by the at least one IR transceiver.

公开(公告)号：US09269790B2

公开(公告)日：2016-02-23

申请号：US14097709

申请日：2013-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Chan-ho Park ,  Nam-young Lee

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

公开(公告)号：US20140252368A1

公开(公告)日：2014-09-11

申请号：US14097709

申请日：2013-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Chan-ho Park ,  Nam-young Lee

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/778 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract translation: 高电子迁移率晶体管（HEMT）器件包括形成在衬底上的多个半导体层，其中在半导体层中形成二维电子气（2DEG）层; 形成在所述多个半导体层上的蚀刻停止层; 形成在蚀刻停止层上的p型半导体层图案; 以及形成在p型半导体层图案上的栅电极。

公开(公告)号：US08769410B2

公开(公告)日：2014-07-01

申请号：US13946433

申请日：2013-07-19

Applicant: Samsung Electronics Co., Ltd

Inventor： Chan-ho Park ,  Kyoung-nyo Hwangbo ,  Mi-kyoung Kim

IPC: G06F3/00 ,  G11B27/34 ,  G06F3/0484 ,  G06F3/0485 ,  G11B27/10

CPC classification number: G06F3/04817 ,  G06F3/0482 ,  G06F3/0484 ,  G06F3/04842 ,  G06F3/04847 ,  G06F3/04855 ,  G06F3/0486 ,  G06F3/0488 ,  G11B27/105 ,  G11B27/34

Abstract: A method for providing a graphical user interface (GUI) to receive a user command on a touch screen, and a multimedia apparatus using the same. The method for providing a GUI includes determining whether an enlargement command for a GUI item is received, and enlarging the GUI item. Therefore, it is possible to enable a user to operate the GUI item more correctly, and to provide the superior visual effect when the GUI item is operated.

Abstract translation: 一种用于提供图形用户界面（GUI）以在触摸屏上接收用户命令的方法，以及使用其的多媒体设备。 提供GUI的方法包括确定是否接收到用于GUI项目的放大命令，以及放大GUI项目。 因此，能够使用户更正确地操作GUI项目，并且在GUI项目被操作时提供优异的视觉效果。

公开(公告)号：US11334217B2

公开(公告)日：2022-05-17

申请号：US17169105

申请日：2021-02-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan-ho Park ,  Kyoung-nyo Hwangbo ,  Mi-kyoung Kim

IPC: G06F3/048 ,  G06F3/04817 ,  G06F3/04842 ,  G06F3/0482 ,  G06F3/04855 ,  G11B27/10 ,  G11B27/34 ,  G06F3/04847 ,  G06F3/0484 ,  G06F3/0486 ,  G06F3/0488

Abstract: A method for providing a graphical user interface (GUI) to receive a user command on a touch screen, and a multimedia apparatus using the same. The method for providing a GUI includes determining whether an enlargement command for a GUI item is received, and enlarging the GUI item. Therefore, it is possible to enable a user to operate the GUI item more correctly, and to provide the superior visual effect when the GUI item is operated.

公开(公告)号：US09379227B2

公开(公告)日：2016-06-28

申请号：US14995622

申请日：2016-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Chan-ho Park ,  Nam-young Lee

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/08 ,  H01L29/417

CPC classification number: H01L29/778 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract translation: 高电子迁移率晶体管（HEMT）器件包括形成在衬底上的多个半导体层，其中在半导体层中形成二维电子气（2DEG）层; 形成在所述多个半导体层上的蚀刻停止层; 形成在蚀刻停止层上的p型半导体层图案; 以及形成在p型半导体层图案上的栅电极。

公开(公告)号：US20160126339A1

公开(公告)日：2016-05-05

申请号：US14995622

申请日：2016-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Chan-ho Park ,  Nam-young Lee

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/08

CPC classification number: H01L29/778 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract translation: 高电子迁移率晶体管（HEMT）器件包括在衬底上形成的多个半导体层，其中在半导体层中形成二维电子气（2DEG）层; 形成在所述多个半导体层上的蚀刻停止层; 形成在蚀刻停止层上的p型半导体层图案; 以及形成在p型半导体层图案上的栅电极。

公开(公告)号：US09112010B2

公开(公告)日：2015-08-18

申请号：US14160629

申请日：2014-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hoon Lee ,  Chan-ho Park ,  Nam-young Lee

IPC: H01L29/778 ,  H01L29/43 ,  H01L29/66 ,  H01L29/24 ,  H01L29/20 ,  H01L29/417

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/41766 ,  H01L29/432 ,  H01L29/66462

Abstract: A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer.

Abstract translation: 一种氮化物系半导体器件，包括：衬底; 在该衬底上的含GaN层; GaN层上的含氮化物层; 在所述含氮化物层上的沟道阻挡层，所述沟道阻挡层包括氮化物基半导体; 沟道阻挡层上的栅极绝缘层; 以及栅极绝缘层上的栅电极。

公开(公告)号：US20140253241A1

公开(公告)日：2014-09-11

申请号：US14077678

申请日：2013-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hoon Lee ,  Chan-ho Park ,  Nam-young Lee

IPC: H01L29/778 ,  H03F3/193 ,  H01L29/20

CPC classification number: H03F3/193 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7787

Abstract: A high electron mobility transistor (HEMT) device includes a buffer layer on a substrate; a face-inversion layer on a part of the buffer layer; a plurality of semiconductor layers on the face-inversion layer and on the buffer layer; and a source electrode, a drain electrode, and a gate electrode on the plurality of semiconductor layers. The HMT device has a stable, normally Off characteristic.

Abstract translation: 高电子迁移率晶体管（HEMT）器件包括在衬底上的缓冲层; 在缓冲层的一部分上的面反转层; 在面反转层上和缓冲层上的多个半导体层; 以及多个半导体层上的源电极，漏电极和栅电极。 HMT设备具有稳定的常闭特性。