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    MOBILE DEVICE SUPPORTING TOUCH SEMI-LOCK STATE AND METHOD FOR OPERATING THE SAME
    4.
    发明申请
    MOBILE DEVICE SUPPORTING TOUCH SEMI-LOCK STATE AND METHOD FOR OPERATING THE SAME 审中-公开
    支持触摸式半锁状态的移动设备及其操作方法

    公开(公告)号：US20140229899A1

    公开(公告)日：2014-08-14

    申请号：US14255881

    申请日：2014-04-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chang Soo Lee ,  Jae Hyeon Seo

    IPC: G06F3/0481 ,  G06F3/0484 ,  G06F3/0482

    CPC classification number: G06F3/04817 ,  G06F3/0482 ,  G06F3/0484 ,  G06F3/0488 ,  H04M1/274558 ,  H04M1/67 ,  H04M1/677 ,  H04M1/72583 ,  H04M2250/22

    Abstract: A mobile device and a method support a touch semi-lock state. When entering into the touch semi-lock state, a predefined hot menu including items and a touch-lock icon are provided on a touch screen. An output area of the touch-lock icon on the touch screen is defined as a touch event allowable region. A specific item of the hot menu is selected in response to a user input that moves the touch-lock icon onto the specific item. A particular end-user function corresponding to the selected item is activated.

    Abstract translation: 移动设备和方法支持触摸半锁状态。 当进入触摸半锁定状态时，在触摸屏上提供包括项目和触摸锁定图标的预定义热菜单。 触摸屏上的触摸锁定图标的输出区域被定义为触摸事件允许区域。 响应于将触摸锁定图标移动到特定项目上的用户输入，选择热菜单的特定项目。 对应于所选项目的特定终端用户功能被激活。

    Semiconductor memory apparatus and method of driving the same
    6.
    发明授权
    Semiconductor memory apparatus and method of driving the same 有权

    公开(公告)号：US10811079B2

    公开(公告)日：2020-10-20

    申请号：US16268807

    申请日：2019-02-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chan Min Park ,  Dae Sun Kim ,  In Cheol Nam ,  Chang Soo Lee ,  Jin Seok Jeong

    IPC: G11C11/4074 ,  G11C11/4096 ,  G11C11/408

    Abstract: A semiconductor memory apparatus includes a memory cell unit and an internal voltage stabilization apparatus. The memory cell unit includes a row decoder, a column decoder, and a memory cell array. The internal voltage stabilization apparatus includes an operation termination determination unit configured to determine whether an operation of the semiconductor memory apparatus is terminated on the basis of an external input voltage and output an operation termination command, a termination voltage generation unit configured to generate a termination voltage having a preset voltage value on the basis of a determination result of operation termination by the operation termination determination unit, and a switch unit. The switch unit includes a plurality of switches that are turned in response to the operation termination command, and supplies the termination voltage, input from the termination voltage generation unit, to a plurality of internal nodes of the memory cell array.

    SEMICONDUCTOR MEMORY APPARATUS AND METHOD OF DRIVING THE SAME
    7.
    发明申请
    SEMICONDUCTOR MEMORY APPARATUS AND METHOD OF DRIVING THE SAME 审中-公开

    公开(公告)号：US20200111520A1

    公开(公告)日：2020-04-09

    申请号：US16268807

    申请日：2019-02-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chan Min Park ,  Dae Sun Kim ,  In Cheol Nam ,  Chang Soo Lee ,  Jin Seok Jeong

    IPC: G11C11/4074 ,  G11C11/408 ,  G11C11/4096

    Abstract: A semiconductor memory apparatus includes a memory cell unit and an internal voltage stabilization apparatus. The memory cell unit includes a row decoder, a column decoder, and a memory cell array. The internal voltage stabilization apparatus includes an operation termination determination unit configured to determine whether an operation of the semiconductor memory apparatus is terminated on the basis of an external input voltage and output an operation termination command, a termination voltage generation unit configured to generate a termination voltage having a preset voltage value on the basis of a determination result of operation termination by the operation termination determination unit, and a switch unit. The switch unit includes a plurality of switches that are turned in response to the operation termination command, and supplies the termination voltage, input from the termination voltage generation unit, to a plurality of internal nodes of the memory cell array.

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