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1.发明授权公开(公告)号：US11052644B2
公开(公告)日：2021-07-06
申请号：US16729901
申请日：2019-12-30
发明人： Sungwoo Hwang , Se Yun Kim , Jong Wook Roh , Woojin Lee , Jongmin Lee , Doh Won Jung , Chan Kwak
摘要： An electrical conductor includes: a first conductive layer including a plurality of ruthenium oxide nanosheets, wherein at least one ruthenium oxide nanosheet of the plurality of ruthenium oxide nanosheets includes a halogen, a chalcogen, a Group 15 element, or a combination thereof on a surface of the ruthenium oxide nanosheet.
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公开(公告)号：US09837179B2
公开(公告)日：2017-12-05
申请号：US14940223
申请日：2015-11-13
发明人： Kimoon Lee , Sang Il Kim , Se Yun Kim , Sung Woo Hwang , Woojin Lee , Hee Jung Park , Yoon Chul Son , Hyosug Lee , Doh Won Jung , Youngjin Cho , Jae-Young Choi
CPC分类号： H01B1/02 , C01B19/002 , C01B19/007 , C01P2002/20 , C01P2002/30 , C01P2002/90 , C30B7/00 , C30B29/46 , C30B29/60 , C30B29/605 , C30B29/607 , H01B1/06 , H01L21/02417 , H01L21/02573 , H01L21/02609
摘要： An electrically conductive thin film including: a material including a compound represented by Chemical Formula 1 and having a layered crystal structure, MemAa Chemical Formula 1 wherein Me is Al, Ga, In, Si, Ge, Sn, A is S, Se, Te, or a combination thereof, and m and a each are independently a number selected so that the compound of Chemical Formula 1 is neutral; and a dopant disposed in the compound of Chemical Formula 1, wherein the dopant is a metal dopant that is different from Me and has an oxidation state which is greater than an oxidation state of Me, a non-metal dopant having a greater number of valence electrons than a number of valence electrons of A in Chemical Formula 1, or a combination thereof, and wherein the compound of Chemical Formula 1 includes a chemical bond which includes a valence electron of an s orbital of Me.
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公开(公告)号：US09767936B2
公开(公告)日：2017-09-19
申请号：US14740583
申请日：2015-06-16
发明人： Sungwoo Hwang , Kimoon Lee , Doh Won Jung , Sang Il Kim , Kyoung-Seok Moon , Woojin Lee
IPC分类号： H01B1/02 , C01B19/00 , C01B19/02 , C04B35/547
CPC分类号： H01B1/02 , C01B19/002 , C01B19/02 , C01P2002/72 , C01P2004/24 , C01P2006/40 , C01P2006/60 , C04B35/547 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/42 , C04B2235/428 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/662 , C04B2235/76
摘要： An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure: AxMyChz Chemical Formula 1 wherein A is V, Nb, or Ta, M is Ni, Co, Fe, Pd, Pt, Ir, Rh, Si, or Ge, Ch is S, Se, or Te, x is a number from 1 to 3, y is a number from 1 to 3, and z is a number from 2 to 14.
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公开(公告)号：US11823838B2
公开(公告)日：2023-11-21
申请号：US15908229
申请日：2018-02-28
发明人： Doh Won Jung , Jong Wook Roh , Daejin Yang , Chan Kwak , Hyungjun Kim , Woojin Lee
IPC分类号： H01G4/12 , H01G4/30 , C01G33/00 , C04B35/495 , H01G4/33 , C04B35/468 , H01G4/232 , H01G4/242
CPC分类号： H01G4/1281 , C01G33/006 , C04B35/4682 , C04B35/495 , H01G4/1218 , H01G4/1227 , H01G4/1236 , H01G4/30 , H01G4/33 , C01P2002/34 , C01P2002/50 , C01P2002/72 , C01P2002/78 , C01P2004/03 , C01P2004/24 , C01P2006/40 , C04B2235/3201 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3227 , C04B2235/3255 , C04B2235/5292 , C04B2235/768 , C04B2235/80 , C04B2235/85 , H01G4/232 , H01G4/242
摘要： A two-dimensional perovskite material, a dielectric material including the same, and a multi-layered capacitor. The two-dimensional perovskite material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge which are laminated, a monolayer nanosheet exfoliated from the layered metal oxide, a nanosheet laminate of a plurality of the monolayer nanosheets, or a combination thereof, wherein the two-dimensional perovskite material a first phase having a two-dimensional crystal structure is included in an amount of greater than or equal to about 80 volume %, based on 100 volume % of the two-dimensional perovskite material, and the two-dimensional perovskite material is represented by Chemical Formula 1.
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公开(公告)号：US11664414B2
公开(公告)日：2023-05-30
申请号：US17148787
申请日：2021-01-14
发明人： Hyungjun Kim , Doh Won Jung , Chan Kwak , Ki Hong Kim , Daejin Yang , Chang Soo Lee
IPC分类号： H01L49/02 , B32B18/00 , H01G4/33 , C04B35/495 , H01G4/10
摘要： A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.
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公开(公告)号：US10395790B2
公开(公告)日：2019-08-27
申请号：US14539408
申请日：2014-11-12
发明人： Doh Won Jung , Hee Jung Park , Kimoon Lee , Yoon Chul Son , Woojin Lee , Youngjin Cho
IPC分类号： H01B1/02 , H01B1/06 , C01B35/04 , G06F3/041 , H01L31/0224
摘要： A transparent conductor including a Group 5 transition metal and boron, wherein the compound has a layered structure.
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公开(公告)号：US09809455B2
公开(公告)日：2017-11-07
申请号：US14721107
申请日：2015-05-26
发明人： Sung Woo Hwang , Kyoung-Seok Moon , Youngjin Cho , Yoon Chul Son , Kimoon Lee , Doh Won Jung
IPC分类号： C01B19/00 , H01B1/06 , H01L21/02 , H01L31/0224 , C30B29/46 , C03C17/22 , C22C28/00 , C22C30/00 , B22F5/00 , B22F1/00
CPC分类号： C01B19/002 , B22F5/006 , B22F2001/0033 , C01P2002/20 , C01P2002/70 , C01P2002/76 , C01P2002/90 , C01P2006/40 , C01P2006/60 , C03C17/22 , C03C2217/289 , C22C28/00 , C22C30/00 , C30B29/46 , H01B1/06 , H01L21/02491 , H01L21/02502 , H01L21/02505 , H01L31/022466
摘要： A conductive material including a first element selected from a transition metal, a platinum-group element, a rare earth element, and a combination thereof, a second element having an atomic radius which is 10 percent less than to 10 percent greater than an atomic radius of the first element, and a chalcogen element, wherein the conductive material has a layered crystal structure.
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公开(公告)号：US11769630B2
公开(公告)日：2023-09-26
申请号：US17165300
申请日：2021-02-02
发明人： Taewon Jeong , Hyeon Cheol Park , Daejin Yang , Doh Won Jung , Giyoung Jo
IPC分类号： H01G4/12 , C04B35/497 , G11C11/22 , H01L49/02 , H10B53/00
CPC分类号： H01G4/1254 , C04B35/497 , G11C11/221 , H01L28/60 , H10B53/00
摘要： Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
(1−x)KaNabNbO3.xM(AcSbd)O3 [Formula 1]
wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0-
公开(公告)号：US11562857B2
公开(公告)日：2023-01-24
申请号：US17153371
申请日：2021-01-20
发明人： Giyoung Jo , Hyeon Cheol Park , Daejin Yang , Doh Won Jung , Taewon Jeong
摘要： A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.
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公开(公告)号：US10998133B2
公开(公告)日：2021-05-04
申请号：US15848562
申请日：2017-12-20
发明人： Daejin Yang , Jong Wook Roh , Doh Won Jung , Chan Kwak , Hyungjun Kim , Woojin Lee
摘要： A dielectric material includes a layered metal oxide including a first layer having a positive charge and a second layer having a negative charge, wherein the first layer and the second layer are alternately disposed; a monolayered nanosheet; a nanosheet laminate of the monolayered nanosheets; or a combination thereof, wherein the dielectric material includes a two-dimensional layered material having a two-dimensional crystal structure, wherein the two-dimensional layered material is represented by Chemical Formula 1 X2[A(n−1)MnO(3n+1)] Chemical Formula 1 wherein, in Chemical Formula 1, X is H, an alkali metal, a cationic polymer, or a combination thereof, A is Ca, Sr, La, Ta, or a combination thereof, M is La, Ta, Ti, or a combination thereof, and n≥1.
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