公开(公告)号：US20240212992A1

公开(公告)日：2024-06-27

申请号：US18453378

申请日：2023-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changheon Lee ,  Sangki Nam ,  Kuihyun Yoon ,  Kiho Lee ,  Sangho Lee ,  Sangheun Lee ,  Jaemin Rhee ,  Junghyun Cho ,  Seoyeon Choi

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01J37/3299 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334

Abstract: Provided is a plasma processing apparatus including a substrate chuck in a chamber, a restriction ring surrounding an outer perimeter of the substrate chuck, a movable ring on the restriction ring, and an actuator configured to move the movable ring, wherein grooves formed in the restriction ring are opened or closed by movement of the movable ring. In addition, provided is a plasma processing method using the plasma processing apparatus.

公开(公告)号：US20240231228A1

公开(公告)日：2024-07-11

申请号：US18326617

申请日：2023-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog Koh ,  Cheol Kang ,  Yoonhyun Kwak ,  Minsang Kim ,  Sunyoung Lee ,  Changheon Lee ,  Kyuhyun Im ,  Jungha Chae ,  Sunghyun Han

IPC: G03F7/038 ,  C08F12/30 ,  G03F7/004

CPC classification number: G03F7/0382 ,  C08F12/30 ,  G03F7/0045

Abstract: Provided are a resist composition and a method of forming a pattern using the same, the resist composition including an organometallic compound represented by Formula 1 below, and a polymer including a repeating unit represented by Formula 2 below:




wherein, in Formulas 1 and 2, M11, R11, R12, n, A21, L21 to L23, a21 to a23, R21 to R24, b22, p, and X21 are as described in the specification.

公开(公告)号：US20240231223A1

公开(公告)日：2024-07-11

申请号：US18326632

申请日：2023-05-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog Koh ,  Yoonhyun Kwak ,  Mijeong Kim ,  Minsang Kim ,  Sunyoung Lee ,  Changheon Lee ,  Kyuhyun Im ,  Jungha Chae ,  Sunghyun Han

IPC: G03F7/004 ,  C07F7/22

CPC classification number: G03F7/0042 ,  C07F7/2208

Abstract: Provided are a resist composition and a method of forming a pattern by using the same, the resist composition including: an organometallic compound represented by Formula 1; and a polymer including a repeating unit containing a radical generating group, a repeating unit containing a radical accepting group, or any combination thereof.


Sn(R11)n(OR12)(4-n)   Formula 1

Descriptions of R11, R12 and n in Formula 1 are provided in the specification.