公开(公告)号：US20170301569A1

公开(公告)日：2017-10-19

申请号：US15486861

申请日：2017-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanmin Lee ,  Youngjae Kim

IPC: H01L21/67 ,  H01L27/108 ,  H01L21/768 ,  H01L21/762 ,  H01L21/683

CPC classification number: H01L27/10888 ,  H01L21/6831 ,  H01L21/76224 ,  H01L21/76883 ,  H01L27/10814 ,  H01L27/10885 ,  H01L27/10891

Abstract: A method of fabricating a semiconductor device includes forming a material layer and a mask pattern on a substrate, mounting the substrate onto an electrostatic chuck, loading the substrate, including the material layer and the mask pattern, mounted on the electrostatic chuck, into an etching chamber, and forming a material pattern by dry etching the material layer using the mask pattern as an etching mask. The dry etching of the material layer includes adjusting a pressure of the etching chamber to adjust a lateral over-etch of the material pattern in a first direction, wherein the first direction is parallel to a surface of the substrate facing the material pattern, and adjusting a temperature of the electrostatic chuck to adjust an etching of the material pattern in a second direction, wherein the second direction crosses the first direction.

公开(公告)号：US10236295B2

公开(公告)日：2019-03-19

申请号：US15486861

申请日：2017-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanmin Lee ,  Youngjae Kim

IPC: H01L27/108 ,  H01L21/762 ,  H01L21/768 ,  H01L21/683

Abstract: A method of fabricating a semiconductor device includes forming a material layer and a mask pattern on a substrate, mounting the substrate onto an electrostatic chuck, loading the substrate, including the material layer and the mask pattern, mounted on the electrostatic chuck, into an etching chamber, and forming a material pattern by dry etching the material layer using the mask pattern as an etching mask. The dry etching of the material layer includes adjusting a pressure of the etching chamber to adjust a lateral over-etch of the material pattern in a first direction, wherein the first direction is parallel to a surface of the substrate facing the material pattern, and adjusting a temperature of the electrostatic chuck to adjust an etching of the material pattern in a second direction, wherein the second direction crosses the first direction.

公开(公告)号：US20230209802A1

公开(公告)日：2023-06-29

申请号：US18088370

申请日：2022-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yuna Lee ,  Sangwuk Park ,  Hyunchul Yoon ,  Seungjae Lee ,  Joonkyu Rhee ,  Chanmin Lee ,  Jungpyo Hong

IPC: H10B12/00

CPC classification number: H10B12/09 ,  H10B12/482 ,  H10B12/50

Abstract: A method of fabricating a semiconductor device includes forming an insulating layer and a peripheral structure on first and second regions of the substrate, forming first and second mask layers on the insulating layer and the peripheral structure, patterning the first and second mask layers to form first and second mask structures on the first and second regions, etching the insulating layer using the first and second mask structures as an etching mask, to form insulating patterns, forming a sacrificial layer in spaces between two adjacent insulating patterns on the first region, removing the second mask pattern on the first region by a dry etching process, forming an anti-oxidation layer on a surface of the second mask layer on the second region after removing the second mask pattern on the first region, and removing the second mask layer with the anti-oxidation layer by a wet etching process.