公开(公告)号：US09829795B2

公开(公告)日：2017-11-28

申请号：US14737962

申请日：2015-06-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： DoYoung Kim ,  Kyoungsil Park

IPC: H01L21/308 ,  G03F7/32 ,  H01L21/027 ,  H01L21/311 ,  H01L21/033 ,  H01L21/3105

CPC classification number: G03F7/32 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/31144

Abstract: Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.

公开(公告)号：US20180039181A1

公开(公告)日：2018-02-08

申请号：US15783593

申请日：2017-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： DoYoung Kim ,  Kyoungsil Park

IPC: G03F7/32 ,  H01L21/3105 ,  H01L21/027 ,  H01L21/311 ,  H01L21/033

CPC classification number: G03F7/32 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/31144

Abstract: Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.

公开(公告)号：US20160071736A1

公开(公告)日：2016-03-10

申请号：US14737962

申请日：2015-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DoYoung Kim ,  Kyoungsil Park

IPC: H01L21/308 ,  G03F7/32 ,  H01L21/311 ,  G03F7/20 ,  H01L21/027 ,  H01L21/02

CPC classification number: G03F7/32 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/311 ,  H01L21/31144

Abstract: Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.

Abstract translation: 制造半导体器件的方法可以包括在下部结构上形成包括光敏硬掩模材料的硬掩模层。 硬掩模层可以包括下部和其上的上部。 可以在硬掩模层上进行曝光和显影处理以去除硬掩模层的上部，从而形成具有基本平坦的顶表面的硬掩模结构。