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1.
公开(公告)号:US20190131301A1
公开(公告)日:2019-05-02
申请号:US16220109
申请日:2018-12-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
IPC: H01L27/092 , H01L27/108 , H01L21/28 , H01L29/49 , H01L29/423 , H01L21/8238 , H01L29/66 , H01L29/10
CPC classification number: H01L27/092 , H01L21/28044 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L27/10808 , H01L27/10823 , H01L27/10873 , H01L29/1037 , H01L29/4236 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/4941 , H01L29/66575 , H01L29/78
Abstract: An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.
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2.
公开(公告)号:US20160247802A1
公开(公告)日:2016-08-25
申请号:US15139360
申请日:2016-04-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
IPC: H01L27/092 , H01L29/423 , H01L21/28 , H01L27/108 , H01L29/49 , H01L21/8238
CPC classification number: H01L27/092 , H01L21/28044 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L27/10808 , H01L27/10823 , H01L27/10873 , H01L29/1037 , H01L29/4236 , H01L29/4238 , H01L29/4925 , H01L29/4933 , H01L29/4941 , H01L29/66575 , H01L29/78
Abstract: An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.
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公开(公告)号:US10685959B2
公开(公告)日:2020-06-16
申请号:US16220109
申请日:2018-12-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dong-Kak Lee , Joon Kim , Bong-hyun Kim , Han-Jin Lim
IPC: H01L21/311 , H01L27/092 , H01L21/28 , H01L21/8238 , H01L27/108 , H01L29/10 , H01L29/423 , H01L29/49 , H01L29/66 , H01L29/78
Abstract: An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.
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