公开(公告)号：US20190131301A1

公开(公告)日：2019-05-02

申请号：US16220109

申请日：2018-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Kak Lee ,  Joon Kim ,  Bong-hyun Kim ,  Han-Jin Lim

IPC: H01L27/092 ,  H01L27/108 ,  H01L21/28 ,  H01L29/49 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/10

CPC classification number: H01L27/092 ,  H01L21/28044 ,  H01L21/28061 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/10808 ,  H01L27/10823 ,  H01L27/10873 ,  H01L29/1037 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/4941 ,  H01L29/66575 ,  H01L29/78

Abstract: An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.

公开(公告)号：US20160247802A1

公开(公告)日：2016-08-25

申请号：US15139360

申请日：2016-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Kak Lee ,  Joon Kim ,  Bong-hyun Kim ,  Han-Jin Lim

IPC: H01L27/092 ,  H01L29/423 ,  H01L21/28 ,  H01L27/108 ,  H01L29/49 ,  H01L21/8238

CPC classification number: H01L27/092 ,  H01L21/28044 ,  H01L21/28061 ,  H01L21/823835 ,  H01L21/823842 ,  H01L27/10808 ,  H01L27/10823 ,  H01L27/10873 ,  H01L29/1037 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/4941 ,  H01L29/66575 ,  H01L29/78

Abstract: An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.

公开(公告)号：US10685959B2

公开(公告)日：2020-06-16

申请号：US16220109

申请日：2018-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Kak Lee ,  Joon Kim ,  Bong-hyun Kim ,  Han-Jin Lim

IPC: H01L21/311 ,  H01L27/092 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/108 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

Abstract: An electrode structure is disclosed. The electrode structure includes a first polysilicon layer doped with resistance adjustment impurities; a second polysilicon layer for adjusting grains, formed in the first polysilicon layer and doped with grain adjustment impurities; an ohmic metal layer formed on the first and second polysilicon layers; a barrier metal layer formed on the ohmic metal layer; and a metal layer formed on the barrier metal layer.