公开(公告)号：US11113368B2

公开(公告)日：2021-09-07

申请号：US16110542

申请日：2018-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Wook Seo ,  Seong-Hun Moon ,  Moon-Kyung Kim ,  Myeong-Jin Oh ,  Se-Yeong Lee ,  Da-Som Lee

IPC: G06F21/31 ,  G06F9/451 ,  G06F21/60 ,  G06F3/0484 ,  G06F3/0482 ,  G06F3/0488 ,  G06F21/44 ,  G06F21/10 ,  G06F9/4401

Abstract: An electronic device is provided. The electronic device includes a housing, a touchscreen display, a wireless communication circuit, a processor electrically connected to the touchscreen display and the wireless communication circuit, and a memory electrically connected to the processor, wherein the memory is configured to store an application program comprising a user interface, and store an instruction that, when executed, enables the processor to store a permission for accessing, by an application program stored in the memory, at least one among hardware components or software components of the electronic device, activate the application program, allow the application program to access the at least one among hardware components or software components based on the stored permission and display a user interface (UI) of the application program on the touchscreen display, hide a part of the user interface while the application program is executed in a background state, and monitor whether the application program uses the at least one among hardware components or software components while the application program is executed in the background state.

公开(公告)号：US09001572B2

公开(公告)日：2015-04-07

申请号：US14255638

申请日：2014-04-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunsu Choi ,  Jaeseung Choi ,  Gyuhong Kim ,  Dong-Wook Seo

IPC: G11C16/04 ,  G11C11/419 ,  G11C5/14

CPC classification number: G11C11/419 ,  G11C5/14 ,  G11C5/147 ,  G11C11/417

Abstract: A system on chip includes an SRAM. The SRAM includes at least one memory cell and a peripheral circuit accessing the at least memory cell. A first power circuit is configured to supply a first driving voltage to the at least one memory cell. A second power circuit is configured to supply a second driving voltage to the peripheral circuit. The SRAM further includes an auto power switch that selects the higher of the first driving voltage and the second driving voltage and supplies the selected voltage to the at least one memory cell.

Abstract translation: 片上系统包括SRAM。 SRAM包括至少一个存储器单元和至少存储至少存储单元的外围电路。 第一电源电路被配置为向所述至少一个存储器单元提供第一驱动电压。 第二电源电路被配置为向外围电路提供第二驱动电压。 SRAM还包括自动电源开关，其选择较高的第一驱动电压和第二驱动电压，并将所选择的电压提供给至少一个存储单元。

公开(公告)号：US11183233B2

公开(公告)日：2021-11-23

申请号：US16566002

申请日：2019-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yeop Baeck ,  Tae-Hyung Kim ,  Daeyoung Moon ,  Dong-Wook Seo ,  Inhak Lee ,  Hyunsu Choi ,  Taejoong Song ,  Jae-Seung Choi ,  Jung-Myung Kang ,  Hoon Kim ,  Jisu Yu ,  Sun-Yung Jang

IPC: G11C11/419 ,  G11C7/08 ,  H01L23/528 ,  H01L27/092 ,  H01L27/11

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

公开(公告)号：US11854610B2

公开(公告)日：2023-12-26

申请号：US18164199

申请日：2023-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yeop Baeck ,  Tae-Hyung Kim ,  Daeyoung Moon ,  Dong-Wook Seo ,  Inhak Lee ,  Hyunsu Choi ,  Taejoong Song ,  Jae-Seung Choi ,  Jung-Myung Kang ,  Hoon Kim ,  Jisu Yu ,  Sun-Yung Jang

IPC: G11C11/419 ,  H10B10/00 ,  G11C7/08 ,  H01L23/528 ,  H01L27/092

CPC classification number: G11C11/419 ,  G11C7/08 ,  H01L23/5286 ,  H01L27/092 ,  H10B10/12 ,  H10B10/18

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

公开(公告)号：US11581038B2

公开(公告)日：2023-02-14

申请号：US17412588

申请日：2021-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yeop Baeck ,  Tae-Hyung Kim ,  Daeyoung Moon ,  Dong-Wook Seo ,  Inhak Lee ,  Hyunsu Choi ,  Taejoong Song ,  Jae-Seung Choi ,  Jung-Myung Kang ,  Hoon Kim ,  Jisu Yu ,  Sun-Yung Jang

IPC: G11C11/419 ,  G11C7/08 ,  H01L23/528 ,  H01L27/092 ,  H01L27/11

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

公开(公告)号：US10236056B2

公开(公告)日：2019-03-19

申请号：US15428520

申请日：2017-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Wook Seo ,  Jae-Seung Choi ,  Hyun-Su Choi

IPC: G11C7/22 ,  G11C11/419 ,  G11C5/14

Abstract: A volatile memory device includes a memory cell array configured to be supplied with a first power supply voltage through a first power supply line, and configured to store data based on the first power supply line; and a peripheral circuit configured to be supplied with a second power supply voltage through a second power supply line, and configured to control the memory cell array based on the second power supply line, the peripheral circuit including a self timing pulse circuit configured to determine an operation timing of the peripheral circuit, the self timing pulse circuit configured to be supplied with the first power supply voltage through the first power supply line, and the self timing pulse circuit being configured to adjust the operation timing of the peripheral circuit according to the voltage level of the first power supply voltage.

公开(公告)号：US20190065711A1

公开(公告)日：2019-02-28

申请号：US16110542

申请日：2018-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Wook Seo ,  Seong-Hun Moon ,  Moon-Kyung Kim ,  Myeong-Jin Oh ,  Se-Yeong Lee ,  Da-Som Lee

IPC: G06F21/31 ,  G06F9/451 ,  G06F21/60 ,  G06F3/0484 ,  G06F3/0482 ,  G06F3/0488

Abstract: An electronic device is provided. The electronic device includes a housing, a touchscreen display, a wireless communication circuit, a processor electrically connected to the touchscreen display and the wireless communication circuit, and a memory electrically connected to the processor, wherein the memory is configured to store an application program comprising a user interface, and store an instruction that, when executed, enables the processor to store a permission for accessing, by an application program stored in the memory, at least one among hardware components or software components of the electronic device, activate the application program, allow the application program to access the at least one among hardware components or software components based on the stored permission and display a user interface (UI) of the application program on the touchscreen display, hide a part of the user interface while the application program is executed in a background state, and monitor whether the application program uses the at least one among hardware components or software components while the application program is executed in the background state.

公开(公告)号：US11152058B2

公开(公告)日：2021-10-19

申请号：US16566002

申请日：2019-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yeop Baeck ,  Tae-Hyung Kim ,  Daeyoung Moon ,  Dong-Wook Seo ,  Inhak Lee ,  Hyunsu Choi ,  Taejoong Song ,  Jae-Seung Choi ,  Jung-Myung Kang ,  Hoon Kim ,  Jisu Yu ,  Sun-Yung Jang

IPC: G11C11/419 ,  G11C7/08 ,  H01L23/528 ,  H01L27/092 ,  H01L27/11

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

公开(公告)号：US10453521B2

公开(公告)日：2019-10-22

申请号：US15417807

申请日：2017-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yeop Baeck ,  Tae-Hyung Kim ,  Daeyoung Moon ,  Dong-Wook Seo ,  Inhak Lee ,  Hyunsu Choi ,  Taejoong Song ,  Jae-Seung Choi ,  Jung-Myung Kang ,  Hoon Kim ,  Jisu Yu ,  Sun-Yung Jang

IPC: H01L27/11 ,  G11C11/419 ,  H01L23/528 ,  H01L27/092 ,  G11C7/08

Abstract: A semiconductor device includes an active area extending in a first direction, a first transistor including a first gate electrode and first source and drain areas disposed on the active area, the first source and drain areas being disposed at opposite sides of the first gate electrode, a second transistor including a second gate electrode and second source and drain areas disposed on the active area, the second source and drain areas being disposed at opposite sides of the second gate electrode, and a third transistor including a third gate electrode and third source and drain areas disposed on the active area, the third source and drain areas being disposed at opposite sides of the third gate electrode, and the first gate electrode, the second gate electrode, and the third gate electrode extending in a second direction different from the first direction. The second transistor is configured to turn on and off, based on an operation mode of the semiconductor device.

公开(公告)号：US09897655B2

公开(公告)日：2018-02-20

申请号：US14706224

申请日：2015-05-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Gyu Park ,  Dong-Wook Seo ,  Chan-Ho Lee

IPC: G01R31/3185 ,  H03K3/037

CPC classification number: G01R31/318538 ,  G01R31/318555 ,  H03K3/0375

Abstract: A scan chain circuit includes first through N-th flip-flops connected in series to sequentially transfer data in response to a control signal, where N is an integer greater than 1. In the first through N-th flip-flops, the data are transferred in a first direction from the first flip-flop to the N-th flip-flop. The control signal is applied to the first through N-th flip-flops in a second direction opposite to the first direction from the N-th flip-flop to the first flip-flop.