公开(公告)号：US20210013801A1

公开(公告)日：2021-01-14

申请号：US17032808

申请日：2020-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoong Seo ,  Dongmo Im

IPC: H02M3/07 ,  H04N5/361

Abstract: A charge pump device is configured to generate an output voltage from a square wave, where the charge pump device includes a semiconductor layer; first and second outer wells; a first inner well formed in the first outer well; a second inner well formed in the second outer well; a first capacitor, to which the input signal is applied, and connected to the first outer well; and a second capacitor connected to the first capacitor and second outer well, wherein the first voltage is applied to the first outer well, and a voltage that is lower than the first voltage is applied to the second outer well.

公开(公告)号：US10651226B2

公开(公告)日：2020-05-12

申请号：US15813843

申请日：2017-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min Lee ,  Seokjin Kwon ,  Hyeyun Park ,  Beomsuk Lee ,  Dongmo Im

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

公开(公告)号：US11881496B2

公开(公告)日：2024-01-23

申请号：US17246064

申请日：2021-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jameyung Kim ,  Tae-Hun Lee ,  Dongmo Im ,  Kwansik Cho

IPC: H01L31/112 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.

公开(公告)号：US11665451B2

公开(公告)日：2023-05-30

申请号：US16917162

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minwoong Seo ,  Daehoon Kim ,  Seungsik Kim ,  Dongmo Im

IPC: H04N25/75 ,  H01L27/146 ,  H01L27/148 ,  H04N25/59 ,  H04N25/621 ,  H04N25/771 ,  H04N25/57 ,  H04N25/76

CPC classification number: H04N25/75 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14812 ,  H04N25/59

Abstract: An operating method of an image sensor, including performing a first sampling operation corresponding to first illumination in at least one pixel; performing a second sampling operation corresponding to second illumination in the at least one pixel; and outputting a first pixel voltage corresponding to the first sampling operation, or outputting a second pixel voltage corresponding to the second sampling operation, in the at least one pixel.

公开(公告)号：US11315978B2

公开(公告)日：2022-04-26

申请号：US16857839

申请日：2020-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-Min Lee ,  Seokjin Kwon ,  Hyeyun Park ,  Beomsuk Lee ,  Dongmo Im

IPC: H01L27/146 ,  H04N5/374

Abstract: An image sensor includes a substrate having a first surface and a second surface opposite to each other, a first floating diffusion region provided in the substrate and being adjacent to the first surface, a through-electrode provided in the substrate and electrically connected to the first floating diffusion region, an insulating structure, a bottom electrode, a photoelectric conversion layer, and a top electrode sequentially stacked on the second surface, a color filter buried in the insulating structure, and a top contact plug penetrating the insulating structure to connect the bottom electrode to the through-electrode.

公开(公告)号：US11038419B2

公开(公告)日：2021-06-15

申请号：US17032808

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minwoong Seo ,  Dongmo Im

IPC: H02M3/07 ,  H04N5/361

Abstract: A charge pump device is configured to generate an output voltage from a square wave, where the charge pump device includes a semiconductor layer; first and second outer wells; a first inner well formed in the first outer well; a second inner well formed in the second outer well; a first capacitor, to which the input signal is applied, and connected to the first outer well; and a second capacitor connected to the first capacitor and second outer well, wherein the first voltage is applied to the first outer well, and a voltage that is lower than the first voltage is applied to the second outer well.

公开(公告)号：US11025844B2

公开(公告)日：2021-06-01

申请号：US16674202

申请日：2019-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minwoong Seo ,  Seungsik Kim ,  Jungchak Ahn ,  Jaekyu Lee ,  Dongmo Im ,  Dongseok Cho

IPC: H04N5/355

Abstract: A method of driving an image sensor includes integrating an overflowed charge from a photodiode in the floating diffusion area and a dynamic range capacitor. The dynamic range capacitor is formed between the floating diffusion area and a power supply voltage. The method further includes sampling a first voltage formed in the floating diffusion area by the integrated overflowed charge, resetting the photodiode, the floating diffusion area, and the dynamic range capacitor, sampling a reset level of the reset floating diffusion area, transferring a charge accumulated in the photodiode to the floating diffusion area, and sampling a second voltage formed in the floating diffusion area.

公开(公告)号：US12170298B2

公开(公告)日：2024-12-17

申请号：US17562125

申请日：2021-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jameyung Kim ,  Sungin Kim ,  Dongmo Im

IPC: H01L27/14 ,  H01L27/146

Abstract: An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.

公开(公告)号：US20210160448A1

公开(公告)日：2021-05-27

申请号：US16917162

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minwoong Seo ,  Daehoon Kim ,  Seungsik Kim ,  Dongmo Im

IPC: H04N5/378 ,  H04N5/355 ,  H01L27/146 ,  H01L27/148

Abstract: An operating method of an image sensor, including performing a first sampling operation corresponding to first illumination in at least one pixel; performing a second sampling operation corresponding to second illumination in the at least one pixel; and outputting a first pixel voltage corresponding to the first sampling operation, or outputting a second pixel voltage corresponding to the second sampling operation, in the at least one pixel.

公开(公告)号：US10826389B1

公开(公告)日：2020-11-03

申请号：US16822207

申请日：2020-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minwoong Seo ,  Dongmo Im

IPC: H02M3/07 ,  H04N5/361

Abstract: A charge pump device is configured to generate an output voltage from a square wave, where the charge pump device includes a semiconductor layer; first and second outer wells; a first inner well formed in the first outer well; a second inner well formed in the second outer well; a first capacitor, to which the input signal is applied, and connected to the first outer well; and a second capacitor connected to the first capacitor and second outer well, wherein the first voltage is applied to the first outer well, and a voltage that is lower than the first voltage is applied to the second outer well.