公开(公告)号：US20230120474A1

公开(公告)日：2023-04-20

申请号：US17750653

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Kyun KIM ,  Seung Bo SHIM ,  Doug Yong SUNG ,  Seung Han BAEK ,  Ju Ho LEE

IPC: H01J37/32

Abstract: A plasma etching apparatus may include a first source electrode, a first bias electrode, and a second bias electrode configured to generate a plasma by supplying energy to a process gas injected into a chamber; and a controller. The controller may be configured to supply a first high-frequency RF power, a first low-frequency RF power, and a second low-frequency RF power to the chamber during a first period from a first time to a second time; ramp down and turn off the first high-frequency RF power to the chamber during a second period from the second time to a third time; and ramp down and turn off the first low-frequency RF power to the chamber during a third period from the second time to a fourth time different from the third time. The third period may be smaller than ½ of the first period and greater than the second period.

公开(公告)号：US20220351947A1

公开(公告)日：2022-11-03

申请号：US17548775

申请日：2021-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kuihyun YOON ,  Sang Ki NAM ,  Kwonsang SEO ,  Sungho JANG ,  Jungmin KO ,  Nam Kyun KIM ,  Tae-Hyun KIM ,  Seunghan BAEK ,  Seungbin AHN ,  Jungmo YANG ,  Changheon LEE ,  Kangmin JEON

IPC: H01J37/32

Abstract: A plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connection ring extended to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is structured to pass a more amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring.

公开(公告)号：US20240258081A1

公开(公告)日：2024-08-01

申请号：US18241862

申请日：2023-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIHWAN KIM ,  Nam Kyun KIM ,  HYUN BAE KIM ,  SEUNGBO SHIM ,  HYEONGMO KANG ,  KYUNG-SUN KIM ,  Daeun SON ,  JUHO LEE

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32174 ,  H01J37/32568

Abstract: A substrate treatment apparatus may include a chucking stage supporting a substrate, a sinusoidal generator supplying a sinusoidal wave to the chucking stage, a non-sinusoidal generator supplying a non-sinusoidal wave to the chucking stage, and a mixer between each of the sinusoidal and non-sinusoidal generators and the chucking stage. The chucking stage may include a chuck body and a plasma electrode in the chuck body. The mixer may include a high pass filter between the sinusoidal generator and the plasma electrode, a low pass filter between the non-sinusoidal generator and the plasma electrode, and a band stop filter between the low pass filter and the plasma electrode.

公开(公告)号：US20220020597A1

公开(公告)日：2022-01-20

申请号：US17370705

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： KYUHO KIM ,  Nam Kyun KIM ,  Sungjun ANN ,  MYUNGSUN CHOI ,  DOUGYONG SUNG ,  SEUNGBO SHIM

IPC: H01L21/311 ,  H01L21/683 ,  H01J37/32

Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.

公开(公告)号：US20240355583A1

公开(公告)日：2024-10-24

申请号：US18431163

申请日：2024-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Naohiko OKUNISHI ,  Hyeong Mo KANG ,  Nam Kyun KIM ,  Seong Sik NAM ,  Seung Bo SHIM

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/52

CPC classification number: H01J37/32137 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32183 ,  H01J37/32541

Abstract: A plasma processing apparatus comprises a shower head configured to receive an electrode therein, and a variable impedance controller on the shower head. The variable impedance controller includes a first member spaced apart from the shower head and arranged along a circumference of the shower head, and a second member on the first member and configured to rotate. The variable impedance controller is configured to control an impedance by changing the impedance resulting from the first member and the second member as at least one contact point between the first member and the second member is changed according to rotation of the second member.

公开(公告)号：US20230143327A1

公开(公告)日：2023-05-11

申请号：US17850478

申请日：2022-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGSEOK HAN ,  Seunghan BAEK ,  KYUNG-SUN KIM ,  Nam Kyun KIM ,  SANG KI NAM ,  KUIHYUN YOON ,  KANGMIN JEON

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32724 ,  H01J37/32807 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334

Abstract: Disclosed are focus rings, substrate processing apparatuses including the same, and substrate processing methods using the same. The focus ring comprises a first ring formed around an axis that extends in a first direction and a second ring separate from the first ring and formed around the axis. A portion of an inner lateral surface of the second ring is in contact with a portion of an outer lateral surface of the first ring. When viewed from a cross-sectional view from a direction perpendicular to the axis, a first angle between the outer lateral surface and the first direction is different from a second angle between the inner lateral surface and the first direction.