公开(公告)号：US10566207B2

公开(公告)日：2020-02-18

申请号：US16135669

申请日：2018-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyeongseop Kim ,  Kyung Yub Jeon ,  Seul Gi Han

IPC: H01L21/331 ,  H01L21/308 ,  H01L21/311 ,  H01L21/033

Abstract: A method for defining a length of a fin including forming a plurality of first slice walls on a mask material layer, which is provided over the fin, using a plurality of hard mask patterns, providing a plurality of fill mask patterns self-aligned with respect to the plurality of first slice walls to expose one or more select areas between one or more pairs of adjacent ones of the plurality of first slice walls, and providing a trim mask pattern including one or more openings and self-aligned with respect to the plurality of second slice walls to expose one or more of the plurality of first slice walls may be provided.

公开(公告)号：US20180286859A1

公开(公告)日：2018-10-04

申请号：US15837310

申请日：2017-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung Ho Kang ,  Gyeongseop Kim ,  Jeong Lim Kim ,  Jae Myoung Lee ,  Heung Suk Oh ,  Yeon Hwa Lim ,  Joong Won Jeon

IPC: H01L27/088 ,  H01L21/033 ,  H01L21/308 ,  H01L21/8234

CPC classification number: H01L27/0886 ,  H01L21/0334 ,  H01L21/3083 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0657 ,  H01L29/41791

Abstract: A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.

公开(公告)号：US10991692B2

公开(公告)日：2021-04-27

申请号：US16840764

申请日：2020-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung Ho Kang ,  Gyeongseop Kim ,  Jeong Lim Kim ,  Jae Myoung Lee ,  Heung Suk Oh ,  Yeon Hwa Lim ,  Joong Won Jeon ,  Sung Min Kim

IPC: H01L27/088 ,  H01L21/033 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L29/417

Abstract: A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.

公开(公告)号：US20200043922A1

公开(公告)日：2020-02-06

申请号：US16593058

申请日：2019-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung Ho Kang ,  Gyeongseop Kim ,  Jeong Lim Kim ,  Jae Myoung Lee ,  Heung Suk Oh ,  Yeon Hwa Lim ,  Joong Won Jeon ,  Sung Min Kim

IPC: H01L27/088 ,  H01L21/308 ,  H01L21/8234 ,  H01L21/033 ,  H01L27/12 ,  H01L21/84

Abstract: A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.

公开(公告)号：US10748821B2

公开(公告)日：2020-08-18

申请号：US15863041

申请日：2018-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyeongseop Kim

IPC: H01L21/66 ,  H01L21/027 ,  H01L27/02 ,  G03F1/44 ,  G03F7/20 ,  G06F30/20 ,  G06F30/392

Abstract: A method for measuring pattern placement error (PPE) on a wafer includes receiving a photomask pattern. One or more unit cell patterns are added to the photomask pattern. Each of the unit cell patterns includes at least one reference design pattern and at least one PPE check design pattern. A photomask is fabricated from the photomask pattern with the one or more unit cell patterns added thereto. A wafer is patterned using the fabricated photomask. A microscope image of the patterned wafer is acquired. Pattern placement error is measured as a displacement between the at least one reference design pattern and the at least one PPE check design pattern.

公开(公告)号：US20200235097A1

公开(公告)日：2020-07-23

申请号：US16840764

申请日：2020-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung Ho Kang ,  Gyeongseop Kim ,  Jeong Lim Kim ,  Jae Myoung Lee ,  Heung Suk Oh ,  Yeon Hwa Lim ,  Joong Won Jeon ,  Sung Min Kim

IPC: H01L27/088 ,  H01L27/12 ,  H01L21/84 ,  H01L21/308 ,  H01L21/8234 ,  H01L21/033

Abstract: A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.

公开(公告)号：US10475789B2

公开(公告)日：2019-11-12

申请号：US15837310

申请日：2017-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoung Ho Kang ,  Gyeongseop Kim ,  Jeong Lim Kim ,  Jae Myoung Lee ,  Heung Suk Oh ,  Yeon Hwa Lim ,  Joong Won Jeon ,  Sung Min Kim

IPC: H01L27/088 ,  H01L21/033 ,  H01L21/8234 ,  H01L21/308 ,  H01L21/84 ,  H01L27/12 ,  H01L29/06 ,  H01L29/417

Abstract: A semiconductor device comprises a first fin-type pattern comprising a first long side extending in a first direction, and a first short side extending in a second direction. A second fin-type pattern is arranged substantially parallel to the first fin-type pattern. A first gate electrode intersects the first fin-type pattern and the second fin-type pattern. The second fin-type pattern comprises a protrusion portion that protrudes beyond the first short side of the first fin-type pattern. The first gate electrode overlaps with an end portion of the first fin-type pattern that comprises the first short side of the first fin-type pattern. At least part of a first sidewall of the first fin-type pattern that defines the first short side of the first fin-type pattern is defined by a first trench having a first depth. The first trench directly adjoins a second trench having a second, greater, depth.