公开(公告)号：US08883596B2

公开(公告)日：2014-11-11

申请号：US13790076

申请日：2013-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonghwee Cheong ,  Mansug Kang ,  Joon Kim ,  Kihong Nam ,  Gyuwan Choi

IPC: H01L29/66 ,  H01L27/108 ,  H01L27/105 ,  H01L27/22 ,  H01L27/24

CPC classification number: H01L29/66666 ,  H01L27/1052 ,  H01L27/10876 ,  H01L27/228 ,  H01L27/2454

Abstract: A semiconductor device with vertical channel transistors and a method of fabricating the same are provided. A method of fabricating the semiconductor device includes patterning a substrate to form a trench that defines an active region, forming a sacrificial pattern in a lower region of the trench, forming a spacer on an upper sidewall of the trench, recessing a top surface of the sacrificial pattern to form a window exposing a sidewall of the active region between the spacer and the sacrificial pattern, doping a sidewall of the trench through the window to form a doped region in the active region, and forming a wiring in the trench to be connected to the doped region.

Abstract translation: 提供了具有垂直沟道晶体管的半导体器件及其制造方法。 一种制造半导体器件的方法包括图案化衬底以形成限定有源区的沟槽，在沟槽的下部区域中形成牺牲图案，在沟槽的上侧壁上形成间隔物，使沟槽的顶面凹陷 牺牲图案以形成暴露间隔物和牺牲图案之间的有源区域的侧壁的窗口，通过窗口掺杂沟槽的侧壁以在有源区域中形成掺杂区域，以及在待连接的沟槽中形成布线 到掺杂区域。

公开(公告)号：US09941135B2

公开(公告)日：2018-04-10

申请号：US14840114

申请日：2015-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejun Park ,  Dohyung Kim ,  Jaihyung Won ,  Sangho Roh ,  Eunsol Shin ,  Seung Moo Lee ,  Gyuwan Choi

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/762 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02 ,  H01L29/423 ,  H01L27/108

CPC classification number: H01L21/3081 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/762 ,  H01L21/76224 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10888 ,  H01L29/4236

Abstract: A method of forming a hard mask layer on a substrate includes forming an amorphous carbon layer using nitrous oxide (N2O). A source of carbon and the nitrous oxide (N2O) are introduced to the substrate under a plasma ambient of an inert gas. The amorphous carbon layer has a nitrogen content ranging from about 0.05 at % to about 30 at % and an oxygen content ranging from about 0.05 at % to about 10 at %. In forming a semiconductor device, the hard mask layer is patterned, and a target layer beneath the hard mask layer is etched using the patterned hard mask layer as an etch mask.