公开(公告)号：US20170062437A1

公开(公告)日：2017-03-02

申请号：US15243248

申请日：2016-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Seok Lee ,  Byoung-Ho Kwon ,  Sang-Kyun Kim ,  Yun-Jeong Kim ,  Seung-Ho Park ,  Hao Cui ,  ln-Seak Hwang

IPC: H01L27/108 ,  H01L21/3105 ,  H01L21/762

CPC classification number: H01L27/10873 ,  H01L21/0337 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76224 ,  H01L21/76229 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10894

Abstract: In a method of manufacturing a semiconductor device, mask patterns are formed on a semiconductor substrate. An organic layer is formed on the semiconductor substrate to cover the mask patterns. An upper portion of the organic layer is planarized using a polishing composition. The polishing composition includes an oxidizing agent and is devoid of abrasive particles.

Abstract translation: 在制造半导体器件的方法中，在半导体衬底上形成掩模图案。 在半导体衬底上形成有机层以覆盖掩模图案。 使用抛光组合物对有机层的上部进行平面化处理。 抛光组合物包括氧化剂并且没有磨料颗粒。

公开(公告)号：US20170098653A1

公开(公告)日：2017-04-06

申请号：US15182637

申请日：2016-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Ho Koh ,  Hye-Sung Park ,  Byoung-Ho Kwon ,  Jong-Hyuk Park ,  Bo-Un Yoon ,  ln-Seak Hwang

IPC: H01L27/108 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L27/10894 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/31138 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10897

Abstract: Methods of manufacturing a semiconductor device are provided. Methods may include forming first to third regions having densities different from one another on a substrate, covering the first to third regions to form an upper interlayer insulating film including a low step portion and a high step portion higher than the low step portion, forming an organic film on the upper interlayer insulating film, removing a part of the organic film to expose an upper surface of the high step portion, removing the high step portion so that an upper surface of the high step portion is disposed on at least the same line as the organic film disposed on the upper surface of the lower step portion, removing the remaining part of the organic film to expose the upper surface of the upper interlayer insulating film and flattening the upper surface of the upper interlayer insulating film.