公开(公告)号：US09529960B2

公开(公告)日：2016-12-27

申请号：US14679710

申请日：2015-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Choi ,  Heung-suk Oh ,  Sin-jeung Park ,  Rae-won Yi

IPC: G06F17/50 ,  H01L21/308 ,  G03F1/00 ,  H01L21/027 ,  G03F7/20

CPC classification number: G06F17/5081 ,  G03F1/00 ,  G03F7/70433 ,  G03F7/70558 ,  H01L21/027 ,  H01L21/308

Abstract: A method of providing a photolithography pattern can be provided by identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter that is compared to a predetermined identification threshold value for the feature parameter. A first region of the weak feature can be classified as a first dosage region and a second region of the weak feature can be classified as a second dosage region. Related methods and apparatus are also disclosed.

Abstract translation: 可以通过基于与特征参数的预定识别阈值进行比较的特征参数来识别光刻图案中包括的多个特征中的至少一个弱特征来提供提供光刻图案的方法。 弱特征的第一区域可以分类为第一剂量区域，弱特征的第二区域可以分类为第二剂量区域。 还公开了相关方法和装置。

公开(公告)号：US20150220679A1

公开(公告)日：2015-08-06

申请号：US14679710

申请日：2015-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Choi ,  Heung-suk Oh ,  Sin-jeung Park ,  Rae-won Yi

IPC: G06F17/50

CPC classification number: G06F17/5081 ,  G03F1/00 ,  G03F7/70433 ,  G03F7/70558 ,  H01L21/027 ,  H01L21/308

Abstract: A method of providing a photolithography pattern can be provided by identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter that is compared to a predetermined identification threshold value for the feature parameter, A first region of the weak feature can be classified as a first dosage region and a second region of the weak feature can be classified as a second dosage region. Related methods and apparatus are also disclosed.

Abstract translation: 可以通过基于与特征参数的预定识别阈值进行比较的特征参数来识别光刻图案中包括的多个特征中的至少一个弱特征来提供提供光刻图案的方法。第一区域 的弱特征可以分类为第一剂量区域，弱特征的第二区域可以分类为第二剂量区域。 还公开了相关方法和装置。