Touch sensor and touch sensing method

    公开(公告)号:US12124664B2

    公开(公告)日:2024-10-22

    申请号:US18485708

    申请日:2023-10-12

    IPC分类号: G06F3/044 G06F3/041

    CPC分类号: G06F3/0446 G06F3/0412

    摘要: A touch sensor of multi-driving scheme includes a touch panel including input lines and output lines, the touch panel causes a change in mutual capacitance in response to touch. Processing circuitry generates transmission signals to the input lines as a result of an encoding operation on a first matrix having an inverse matrix, each of the transmission signals has a first polarity or a second polarity opposite in phase to the first polarity; outputs the transmission signals in an unbalanced period when the sum of phases of the transmission signals is greater than 0; receives receiving signals through the output lines; and decodes the receiving signals based on the first matrix, the receiving signals generated by the change in the mutual capacitance in response to the touch.

    Display device including touch screen panel

    公开(公告)号:US11531427B2

    公开(公告)日:2022-12-20

    申请号:US17550112

    申请日:2021-12-14

    IPC分类号: G06F3/041 G06F3/044 G06F1/16

    摘要: A display device, including: a touch screen panel including a touch panel and a display panel stacked under the touch panel; a touch driving circuit; and one or more rollers on which at least a portion of the touch screen panel is rolled. The touch panel may include receiving electrodes extending in a first axis direction and arranged in parallel in a second axis direction perpendicular to the first axis direction and driving electrodes extending in the second axis direction and arranged in parallel in the first axis direction. The display panel may include gate lines and source lines intersecting with the gate lines. The touch driving circuit may be configured to apply driving signals to the driving electrodes. The touch screen panel rolled on the one or more rollers may be unfolded as the one or more rollers slide in the first axis direction.

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICES

    公开(公告)号:US20220359533A1

    公开(公告)日:2022-11-10

    申请号:US17871059

    申请日:2022-07-22

    发明人: Ho Kyun An Bumsoo Kim

    摘要: A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).

    Method for fabricating semiconductor devices

    公开(公告)号:US11430794B2

    公开(公告)日:2022-08-30

    申请号:US17242932

    申请日:2021-04-28

    发明人: Ho Kyun An Bumsoo Kim

    摘要: A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).