Abstract:
A host for controlling a non-volatile memory card, a system including the same, and methods of operating the host and the system are provided. The method of operating the host connected with the non-volatile memory card through a clock bus, a command bus, and one or more data buses includes transmitting a first command to the non-volatile memory card through the command bus, transmitting first data corresponding to the first command to the non-volatile memory card through the one or more data buses or receiving the first data from the non-volatile memory card through the data buses, and transmitting a second command to the non-volatile memory card at least once through the command bus during or before transfer of the first data.
Abstract:
In an example embodiment, a data transmission apparatus includes a transmission link module configured to generate a reference clock signal and a transmission D-PHY module. The transmission D-PHY module includes a first phase locked loop configured to receive the reference clock signal, and generate a first clock signal. The transmission D-PHY module further includes a second phase locked loop configured to receive the reference clock signal, and generate a second clock signal having a different frequency than the first clock signal. The transmission D-PHY module further includes a multiplexer configured to select and output one of the first and second clock signals as a clock signal according to a selection signal. The transmission D-PHY module further includes a data transmitter configured to convert parallel data into serial data in response to the clock signal for transmission to a receiver.
Abstract:
A semiconductor device manufacturing method comprising loading a substrate into a substrate treatment apparatus, performing a deposition process on the substrate, and cleaning the substrate treatment apparatus. The substrate treatment apparatus includes a housing defining a treatment area in which the deposition process is performed, a gas supply supplying a first process gas at a flow rate of 1000 sccm to 15000 sccm and supplying a second process gas, a remote plasma supply connected to the gas supply, generating a first process plasma and a second process plasma by applying RF power to plasma-process the first process gas and the second process gas, and a shower head installed in the housing to supply the first process plasma and the second process plasma to the treatment area. The second process plasma cleans a membrane material deposited on an inner wall of the housing.