公开(公告)号：US20190229242A1

公开(公告)日：2019-07-25

申请号：US16045951

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Heon YOON ,  Jung Hwan KIL ,  Tae Hun KIM ,  Hwa Ryong SONG ,  Jae In SIM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/32 ,  H01L33/42 ,  H01L33/12 ,  H01L33/20

Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.

公开(公告)号：US20190273185A1

公开(公告)日：2019-09-05

申请号：US16202793

申请日：2018-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JuHeon YOON ,  Jung Hwan KIL ,  Tae Hun KIM ,  Hwa Ryong SONG ,  Jae In SIM

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

公开(公告)号：US20200243721A1

公开(公告)日：2020-07-30

申请号：US16845438

申请日：2020-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Jung Hwan KIL ,  Tae Hun KIM ,  Hwa Ryong SONG ,  Jae In SIM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/32 ,  H01L33/12 ,  H01L33/20 ,  H01L33/42 ,  H01L33/38

Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.