公开(公告)号：US20190229242A1

公开(公告)日：2019-07-25

申请号：US16045951

申请日：2018-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Heon YOON ,  Jung Hwan KIL ,  Tae Hun KIM ,  Hwa Ryong SONG ,  Jae In SIM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/32 ,  H01L33/42 ,  H01L33/12 ,  H01L33/20

Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.

公开(公告)号：US20140312369A1

公开(公告)日：2014-10-23

申请号：US14146689

申请日：2014-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Sang Yeon KIM ,  Seung Hwan LEE ,  Jin Hyun LEE ,  Wan Tae LIM ,  Hyun Kwon HONG

IPC: H01L33/36

CPC classification number: H01L33/382 ,  H01L33/20 ,  H01L33/22 ,  H01L33/40 ,  H01L33/44 ,  H01L2224/13 ,  H01L2933/0016

Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

Abstract translation: 一种半导体发光器件，包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 连接到第一导电类型半导体层的第一电极; 第二电极，包括连接到第二导电类型半导体层的接触层，设置在接触层上的覆盖层和设置在覆盖层上的金属缓冲层，金属缓冲层包围覆盖层的上表面和侧表面 ; 设置在所述发光结构上以使得所述第一和第二电极露出的第一绝缘层; 以及设置在所述第一绝缘层上的第二绝缘层，使得所述第一电极的至少一部分和所述金属缓冲层的至少一部分露出。

公开(公告)号：US20190273187A1

公开(公告)日：2019-09-05

申请号：US16028969

申请日：2018-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Ha Yeong SON ,  Young Sub SHIN

IPC: H01L33/46 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L33/40

Abstract: Provided is a semiconductor light emitting device which includes: a light emitting structure including a plurality of semiconductor layers and configured to generate and emit light to an outside of the light emitting structure; a transparent electrode layer disposed on the light emitting structure; a transparent protective layer disposed on the transparent electrode layer; a distributed Bragg reflector (DBR) layer disposed on the transparent protective layer and covering at least a part of the transparent electrode layer; and at least one electrode pad connected to the transparent electrode layer through a hole or via.

公开(公告)号：US20160072004A1

公开(公告)日：2016-03-10

申请号：US14714117

申请日：2015-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Yeob SONG ,  Ju Heon YOON ,  Gi Bum KIM ,  Hyun Young KIM ,  Jong Hoon HA

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/04

CPC classification number: H01L33/40

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed therebetween; a first electrode disposed on the light emitting structure to be electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the light emitting structure to be electrically connected to the second conductivity-type semiconductor layer. The second electrode includes a first layer disposed on the second conductivity-type semiconductor layer, and a second layer disposed on the first layer, having a sheet resistance higher than that of the first layer, and having a thickness less than that of the first layer.

Abstract translation: 一种半导体发光器件包括：发光结构，包括第一导电类型半导体层，第二导电型半导体层和设置在其间的有源层; 设置在所述发光结构上以与所述第一导电型半导体层电连接的第一电极; 以及设置在所述发光结构上以电连接到所述第二导电类型半导体层的第二电极。 第二电极包括设置在第二导电类型半导体层上的第一层和设置在第一层上的第二层，其具有比第一层高的薄层电阻，并且其厚度小于第一层的厚度 。

公开(公告)号：US20200243721A1

公开(公告)日：2020-07-30

申请号：US16845438

申请日：2020-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Jung Hwan KIL ,  Tae Hun KIM ,  Hwa Ryong SONG ,  Jae In SIM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/32 ,  H01L33/12 ,  H01L33/20 ,  H01L33/42 ,  H01L33/38

Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.

公开(公告)号：US20190334061A1

公开(公告)日：2019-10-31

申请号：US16234800

申请日：2018-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Heon YOON ,  Gi Bum KIM

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/20 ,  H01L33/42 ,  H01L33/40

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer, and a reflective electrode structure on the transparent electrode layer that includes a light-transmitting insulating layer on the transparent electrode layer with insulating patterns, portions of sides of the insulating patterns being open, and a contact region of the transparent electrode layer being defined by a region between the insulating patterns, air gaps between the transparent electrode layer and the insulating patterns, the air gaps extending in the open portions of the sides of the insulating patterns, and a reflective electrode layer on the insulating patterns to cover the open portions of the insulating patterns, the reflective electrode layer being connected to the contact region of the transparent electrode layer.

公开(公告)号：US20160056118A1

公开(公告)日：2016-02-25

申请号：US14693749

申请日：2015-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Heon YOON ,  Yong Il KIM ,  Myong Soo CHO

IPC: H01L23/00 ,  H01L33/62

CPC classification number: H01L24/16 ,  H01L24/05 ,  H01L24/13 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/02125 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/13022 ,  H01L2224/13027 ,  H01L2224/13111 ,  H01L2224/1607 ,  H01L2224/16106 ,  H01L2224/16258 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014

Abstract: A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.

Abstract translation: 半导体发光器件包括多区域焊盘。 半导体发光器件包括具有第一表面和第二表面的发光二极管（LED）芯片，第一表面设置有第一和第二电极以及与第一表面相对的第二表面。 钝化层设置在LED芯片的表面上，使得第一和第二电极的接合区域通过钝化层露出。 在每个相应的接合区域中设置有焊盘，并且具有多个分离的区域。 焊料凸块设置在每个相应的接合区域中并且覆盖相应焊垫的多个分离区域。 在半导体发光器件中，通过确保焊盘和焊料凸块之间的界面不被完全损坏，从而可以有效地防止焊盘和焊料凸点之间的分离。

公开(公告)号：US20190237626A1

公开(公告)日：2019-08-01

申请号：US16055651

申请日：2018-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Heon YOON ,  Tae Hun KIM ,  Jae In SIM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/42 ,  H01L33/46 ,  H01L33/52

Abstract: A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.

公开(公告)号：US20180198025A1

公开(公告)日：2018-07-12

申请号：US15671275

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In SIM ,  Ju Heon YOON ,  Gi Bum KIM ,  Ji Hye LEE

IPC: H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521 ,  H01L33/007 ,  H01L33/38 ,  H01L33/42 ,  H01L2224/05001 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.