公开(公告)号：US20220235450A1

公开(公告)日：2022-07-28

申请号：US17721428

申请日：2022-04-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Woong KIM ,  Hyeon Woo SEO ,  Hee Ju SHIN ,  Se Chung OH ,  Hyun CHO

IPC: C23C14/34 ,  C23C14/35 ,  H01J37/32 ,  C23C14/08

Abstract: A sputtering apparatus including a chamber, a stage inside the chamber and configured to receive a substrate thereon, a first sputter gun configured to provide a sputtering source to an inside of the chamber, a first RF source configured to provide a first power having a first frequency to the first sputter gun, and a second RF source configured to provide a second power having a second frequency to the first sputter gun, the second frequency being lower than the first frequency may be provided.

公开(公告)号：US20220020409A1

公开(公告)日：2022-01-20

申请号：US17202648

申请日：2021-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee Ju SHIN ,  Sang Hwan PARK ,  Se Chung OH ,  Ki Woong KIM ,  Hyeon Woo SEO

IPC: G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetic memory device includes a pinned layer, a free layer, a tunnel barrier layer between the pinned layer and the free layer, a first oxide layer spaced apart from the tunnel barrier layer with the free layer therebetween, and a second oxide layer spaced apart from the free layer with the first oxide layer therebetween. The first oxide layer includes an oxide of a first material and may have a thickness of 0.3 Å to 2.0 Å. The second oxide layer may include an oxide of a second material and may have a thickness of 0.1 Å to 5.0 Å. A first oxygen affinity of the first material may be greater than a second oxygen affinity of the second material.