SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

    公开(公告)号:US20190043813A1

    公开(公告)日:2019-02-07

    申请号:US16159290

    申请日:2018-10-12

    Abstract: Provided is a semiconductor device including a semiconductor substrate including a main chip area and a scribe lane area adjacent to the main chip area, the scribe lane area including a first region adjacent to the main chip area and a second region adjacent to the first region; an insulating layer disposed on the semiconductor substrate; first embossing structures disposed on a first surface of the insulating layer in a first area of the insulating layer corresponding to the first region; second embossing structures disposed on the first surface of the insulating layer in a second area of the insulating layer corresponding to the second region; and dam structures provided in the first area of the insulating layer at positions corresponding to the first embossing structures, the dam structures extending in a direction perpendicular to a second surface of the insulating layer that is adjacent to the semiconductor substrate.

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