公开(公告)号：US20230147992A1

公开(公告)日：2023-05-11

申请号：US18089691

申请日：2022-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-gil KANG ,  Min-seop PARK ,  Gon-jun KIM ,  Jae-jik BAEK ,  Jae-jin SHIN ,  In-hye JEONG

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01J37/32128 ,  H01L21/67028 ,  H01J37/32357 ,  H01L21/32136 ,  H01L21/31122 ,  H01L21/02595 ,  H01L21/02071 ,  H01J2237/3341

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.

公开(公告)号：US20190393017A1

公开(公告)日：2019-12-26

申请号：US16448450

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-gil KANG ,  Min-seop PARK ,  Gon-jun KIM ,  Jae-jik BAEK ,  Jae-jin SHIN ,  In-hye JEONG

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/311

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.