公开(公告)号：US20180374709A1

公开(公告)日：2018-12-27

申请号：US15870227

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gon-jun KIM ,  Yuri BARSUKOV ,  Vladimir VOLYNETS ,  Dali LIU ,  Sang-jin AN ,  Beom-jin YOO ,  Sang-heon LEE ,  Shamik PATEL

IPC: H01L21/3065 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32009 ,  H01L21/02164 ,  H01L21/02315 ,  H01L21/31116

Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.

公开(公告)号：US20230147992A1

公开(公告)日：2023-05-11

申请号：US18089691

申请日：2022-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-gil KANG ,  Min-seop PARK ,  Gon-jun KIM ,  Jae-jik BAEK ,  Jae-jin SHIN ,  In-hye JEONG

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01J37/32128 ,  H01L21/67028 ,  H01J37/32357 ,  H01L21/32136 ,  H01L21/31122 ,  H01L21/02595 ,  H01L21/02071 ,  H01J2237/3341

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.

公开(公告)号：US20190393017A1

公开(公告)日：2019-12-26

申请号：US16448450

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-gil KANG ,  Min-seop PARK ,  Gon-jun KIM ,  Jae-jik BAEK ,  Jae-jin SHIN ,  In-hye JEONG

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/311

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.