公开(公告)号：US20180254246A1

公开(公告)日：2018-09-06

申请号：US15697881

申请日：2017-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-jine PARK ,  Kee-sang KWON ,  Jae-jik BAEK ,  Yong-sun KO ,  Kwang-wook LEE

IPC: H01L23/532 ,  H01L23/522 ,  H01L29/78 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L23/53204 ,  H01L21/28518 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76889 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53209 ,  H01L29/41791 ,  H01L29/785

Abstract: An integrated circuit device includes an insulating film on a substrate, a lower wiring layer penetrating at least a portion of the insulating film, the lower wiring layer including a first metal, a lower conductive barrier film surrounding a bottom surface and a sidewall of the lower wiring layer, the lower conductive barrier film including a second metal different from the first metal, a first metal silicide capping layer covering a top surface of the lower wiring layer, the first metal silicide capping layer including the first metal, and a second metal silicide capping layer contacting the first metal silicide capping layer and disposed on the lower conductive barrier film, the second metal silicide capping layer including the second metal.

公开(公告)号：US20230147992A1

公开(公告)日：2023-05-11

申请号：US18089691

申请日：2022-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-gil KANG ,  Min-seop PARK ,  Gon-jun KIM ,  Jae-jik BAEK ,  Jae-jin SHIN ,  In-hye JEONG

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01J37/32128 ,  H01L21/67028 ,  H01J37/32357 ,  H01L21/32136 ,  H01L21/31122 ,  H01L21/02595 ,  H01L21/02071 ,  H01J2237/3341

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.

公开(公告)号：US20190393017A1

公开(公告)日：2019-12-26

申请号：US16448450

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-gil KANG ,  Min-seop PARK ,  Gon-jun KIM ,  Jae-jik BAEK ,  Jae-jin SHIN ,  In-hye JEONG

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/311

Abstract: A substrate processing apparatus includes a processing chamber; a susceptor provided in the processing chamber, wherein the susceptor is configured to support a substrate; a first plasma generator disposed on one side of the processing chamber; and a second plasma generator disposed on another side of the processing chamber, wherein the second plasma generator is configured to generate plasma by simultaneously supplying a sinusoidal wave signal and a non-sinusoidal wave signal to the susceptor. By using a substrate processing apparatus, a signal source device, and a method of processing a material layer according to the inventive concept, a smooth etched surface may be obtained for a crystalline material layer without a risk of device damage by RDC.