公开(公告)号：US11977338B2

公开(公告)日：2024-05-07

申请号：US17340267

申请日：2021-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jieun Park ,  Youngmin Seo ,  Inbeom Yim

IPC: G03F7/00 ,  H01L21/66

CPC classification number: G03F7/70641 ,  G03F7/70683 ,  H01L22/20

Abstract: A method of manufacturing a semiconductor device includes selecting a diffraction based focus (DBF) mark that is unaffected by a pattern of a lower layer; manufacturing a mask including a mark pattern for forming the DBF mark; forming the DBF mark in a cell region of a wafer by using the mask; measuring the DBF mark and monitoring defocus; correcting the defocus on the basis of a result of the monitoring; and forming a pattern in the cell region of the wafer, after correcting the defocus.

公开(公告)号：US20240118627A1

公开(公告)日：2024-04-11

申请号：US18203163

申请日：2023-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin Lee ,  Inbeom Yim

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/033 ,  H01L21/66

CPC classification number: G03F7/70633 ,  G03F7/70033 ,  H01L21/0274 ,  H01L21/0337 ,  H01L22/12

Abstract: A method of correcting overlay includes forming first patterns in a plurality of first shot areas by radiating extreme ultraviolet light reflected from a first mask to a first layer; forming second patterns in each of a plurality of second shot areas by radiating extreme ultraviolet light reflected from a second mask to a second layer; matching a pair of second shot areas to each of the first shot areas; and generating first and second correction parameters for correcting an overlay error of the second patterns, wherein the first correction parameter is configured to correct an overlay error of each of the second shot areas based on the first shot area matched to each of the second shot areas, and the second correction parameter is configured to correct an overlay error between the pair of second shot areas matched to each of the first shot areas.

公开(公告)号：US20240134290A1

公开(公告)日：2024-04-25

申请号：US18332238

申请日：2023-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inbeom Yim ,  Junseong Yoon ,  Seungyoon Lee ,  Jeongjin Lee ,  Chan Hwang

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/66

CPC classification number: G03F7/70633 ,  G03F7/706831 ,  G03F7/706837 ,  H01L22/20

Abstract: Provided are a method of selecting multi-wavelengths for overlay measurement, for accurately measuring overlay, and an overlay measurement method and a semiconductor device manufacturing method using the multi-wavelengths. The method of selecting multi-wavelengths for overlay measurement includes measuring an overlay at multiple positions on a wafer at each of a plurality of wavelengths within a set first wavelength range, selecting representative wavelengths that simulate the overlay of the plurality of wavelengths, from among the plurality of wavelengths, and allocating weights to the representative wavelengths, respectively.