公开(公告)号：US20240258081A1

公开(公告)日：2024-08-01

申请号：US18241862

申请日：2023-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIHWAN KIM ,  Nam Kyun KIM ,  HYUN BAE KIM ,  SEUNGBO SHIM ,  HYEONGMO KANG ,  KYUNG-SUN KIM ,  Daeun SON ,  JUHO LEE

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32174 ,  H01J37/32568

Abstract: A substrate treatment apparatus may include a chucking stage supporting a substrate, a sinusoidal generator supplying a sinusoidal wave to the chucking stage, a non-sinusoidal generator supplying a non-sinusoidal wave to the chucking stage, and a mixer between each of the sinusoidal and non-sinusoidal generators and the chucking stage. The chucking stage may include a chuck body and a plasma electrode in the chuck body. The mixer may include a high pass filter between the sinusoidal generator and the plasma electrode, a low pass filter between the non-sinusoidal generator and the plasma electrode, and a band stop filter between the low pass filter and the plasma electrode.

公开(公告)号：US20250104969A1

公开(公告)日：2025-03-27

申请号：US18640332

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUN BAE KIM ,  JUHO LEE ,  HYEONGMO KANG ,  KYUNG-SUN KIM ,  NAM KYUN KIM ,  DONGHYEON NA ,  SANG KI NAM ,  HYUNJAE LEE ,  HYUNHAK JEONG

IPC: H01J37/32

Abstract: A substrate processing method including: placing a substrate in a substrate processing apparatus; applying source power to the substrate processing apparatus; and applying bias power to the substrate processing apparatus, wherein applying the source power to the substrate processing apparatus includes: providing the substrate processing apparatus with a first radio-frequency (RF) power with a first pulse having a first period; and providing the substrate processing apparatus with a second RF power with a second pulse having a second period, wherein the first period is longer than the second period.