公开(公告)号：US20220139669A1

公开(公告)日：2022-05-05

申请号：US17242019

申请日：2021-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOONG CHUNG ,  NAM KYUN KIM ,  NAOHIKO OKUNISHI ,  KYUNG-SUN KIM ,  SEUNG BO SHIM ,  SANG-HO LEE ,  KANG MIN JEON

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing apparatus includes; a chamber, a lower electrode disposed within the chamber and including a lower surface and an opposing upper surface configured to seat a wafer, an RF rod disposed on the lower surface of the lower electrode and extending in a vertical direction. The RF plate includes a first portion contacting the lower surface of the lower electrode, a second portion protruding from the first portion towards the RF rod, and a third portion extending from the second portion to connect the RF rod. A grounding electrode is spaced apart from the RF plate and at least partially surrounds a side wall of the RF rod and a side wall of the second portion of the RF plate. The grounding electrode includes a first grounding electrode facing each of the side wall of the RF rod and the second portion of the RF plate, and a second grounding electrode at least partially surrounding the first grounding electrode, and configured to horizontally rotate.

公开(公告)号：US20160203996A1

公开(公告)日：2016-07-14

申请号：US15074290

申请日：2016-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KANGMIN JEON ,  KYUNG-SUN KIM ,  DOUGYONG SUNG ,  TAE-HWA KIM ,  HEUNGSIK PARK ,  JUNG MIN KIM

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/32889 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02118 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069 ,  H01L27/11582

Abstract: Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.

Abstract translation: 提供了一种基板制造方法和用于其的基板制造装置。 衬底制造方法包括将具有掩模膜的衬底提供到腔室中。 在室中诱导等离子体反应。 交替地将第一气体和第二气体提供到腔室中以蚀刻衬底。 第一和第二气体中的每一个以包括方波形状的压力波动分布的稳定的进料压力被提供到室中。

公开(公告)号：US20240258081A1

公开(公告)日：2024-08-01

申请号：US18241862

申请日：2023-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIHWAN KIM ,  Nam Kyun KIM ,  HYUN BAE KIM ,  SEUNGBO SHIM ,  HYEONGMO KANG ,  KYUNG-SUN KIM ,  Daeun SON ,  JUHO LEE

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32174 ,  H01J37/32568

Abstract: A substrate treatment apparatus may include a chucking stage supporting a substrate, a sinusoidal generator supplying a sinusoidal wave to the chucking stage, a non-sinusoidal generator supplying a non-sinusoidal wave to the chucking stage, and a mixer between each of the sinusoidal and non-sinusoidal generators and the chucking stage. The chucking stage may include a chuck body and a plasma electrode in the chuck body. The mixer may include a high pass filter between the sinusoidal generator and the plasma electrode, a low pass filter between the non-sinusoidal generator and the plasma electrode, and a band stop filter between the low pass filter and the plasma electrode.

公开(公告)号：US20240266144A1

公开(公告)日：2024-08-08

申请号：US18238874

申请日：2023-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEWON JEONG ,  KYEONGTEA BANG ,  SEUNGBO SHIM ,  NAOHIKO OKUNISHI ,  KIHWAN JANG ,  KYUNG-SUN KIM

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J2237/327 ,  H01L21/3065

Abstract: A substrate processing apparatus including a process chamber providing a process space and a plasma generator on the process chamber. The plasma generator may include an inner antenna ring; an outer antenna ring outside of spaced apart from the inner antenna ring, and a floating ring between the inner antenna ring and the outer antenna ring. The floating ring may be electrically isolated from the inner antenna ring and the outer antenna ring.

公开(公告)号：US20250104969A1

公开(公告)日：2025-03-27

申请号：US18640332

申请日：2024-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUN BAE KIM ,  JUHO LEE ,  HYEONGMO KANG ,  KYUNG-SUN KIM ,  NAM KYUN KIM ,  DONGHYEON NA ,  SANG KI NAM ,  HYUNJAE LEE ,  HYUNHAK JEONG

IPC: H01J37/32

Abstract: A substrate processing method including: placing a substrate in a substrate processing apparatus; applying source power to the substrate processing apparatus; and applying bias power to the substrate processing apparatus, wherein applying the source power to the substrate processing apparatus includes: providing the substrate processing apparatus with a first radio-frequency (RF) power with a first pulse having a first period; and providing the substrate processing apparatus with a second RF power with a second pulse having a second period, wherein the first period is longer than the second period.

公开(公告)号：US20230143327A1

公开(公告)日：2023-05-11

申请号：US17850478

申请日：2022-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGSEOK HAN ,  Seunghan BAEK ,  KYUNG-SUN KIM ,  Nam Kyun KIM ,  SANG KI NAM ,  KUIHYUN YOON ,  KANGMIN JEON

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32724 ,  H01J37/32807 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334

Abstract: Disclosed are focus rings, substrate processing apparatuses including the same, and substrate processing methods using the same. The focus ring comprises a first ring formed around an axis that extends in a first direction and a second ring separate from the first ring and formed around the axis. A portion of an inner lateral surface of the second ring is in contact with a portion of an outer lateral surface of the first ring. When viewed from a cross-sectional view from a direction perpendicular to the axis, a first angle between the outer lateral surface and the first direction is different from a second angle between the inner lateral surface and the first direction.