公开(公告)号：US20240258081A1

公开(公告)日：2024-08-01

申请号：US18241862

申请日：2023-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIHWAN KIM ,  Nam Kyun KIM ,  HYUN BAE KIM ,  SEUNGBO SHIM ,  HYEONGMO KANG ,  KYUNG-SUN KIM ,  Daeun SON ,  JUHO LEE

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32174 ,  H01J37/32568

Abstract: A substrate treatment apparatus may include a chucking stage supporting a substrate, a sinusoidal generator supplying a sinusoidal wave to the chucking stage, a non-sinusoidal generator supplying a non-sinusoidal wave to the chucking stage, and a mixer between each of the sinusoidal and non-sinusoidal generators and the chucking stage. The chucking stage may include a chuck body and a plasma electrode in the chuck body. The mixer may include a high pass filter between the sinusoidal generator and the plasma electrode, a low pass filter between the non-sinusoidal generator and the plasma electrode, and a band stop filter between the low pass filter and the plasma electrode.

公开(公告)号：US20220020597A1

公开(公告)日：2022-01-20

申请号：US17370705

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： KYUHO KIM ,  Nam Kyun KIM ,  Sungjun ANN ,  MYUNGSUN CHOI ,  DOUGYONG SUNG ,  SEUNGBO SHIM

IPC: H01L21/311 ,  H01L21/683 ,  H01J37/32

Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.

公开(公告)号：US20220165552A1

公开(公告)日：2022-05-26

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： NAM KYUN KIM ,  TAE-SUN SHIN ,  DEOKJIN KWON ,  DONGHYEON NA ,  SEUNGBO SHIM ,  SUNGYONG LIM ,  MINJOON KIM ,  JIN YOUNG BANG ,  BONGJU LEE ,  JINSEOK LEE ,  SUNGIL CHO ,  CHUNGHO CHO

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

公开(公告)号：US20240266144A1

公开(公告)日：2024-08-08

申请号：US18238874

申请日：2023-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEWON JEONG ,  KYEONGTEA BANG ,  SEUNGBO SHIM ,  NAOHIKO OKUNISHI ,  KIHWAN JANG ,  KYUNG-SUN KIM

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J2237/327 ,  H01L21/3065

Abstract: A substrate processing apparatus including a process chamber providing a process space and a plasma generator on the process chamber. The plasma generator may include an inner antenna ring; an outer antenna ring outside of spaced apart from the inner antenna ring, and a floating ring between the inner antenna ring and the outer antenna ring. The floating ring may be electrically isolated from the inner antenna ring and the outer antenna ring.

公开(公告)号：US20180358253A1

公开(公告)日：2018-12-13

申请号：US15864293

申请日：2018-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOUNGJIN NOH ,  NAMJUN KANG ,  EUNG-SU KIM ,  SEUNGBO SHIM ,  SANG-HO LEE

IPC: H01L21/683 ,  H02N13/00 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32724 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H02N13/00

Abstract: An electrostatic chuck includes: a chuck base including a first hole; a first plate on the chuck base, wherein the first plate includes a second hole on the first hole; a first bushing in the first hole; and a porous block in the first bushing, wherein the first bushing contacts the first plate and is disposed adjacent to the porous block.