Abstract:
A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.
Abstract:
A light-emitting device including a first electrode, a second electrode, and a light-emitting film disposed between the first electrode and the second electrode, and a method of producing the device. The light-emitting film includes a fluorine-containing organic salt, and quantum dots that do not include cadmium, lead, or a combination thereof, and the fluorine-containing organic salt includes a substituted or unsubstituted C1 to C30 hydrocarbon group, a non-metallic element, fluorine, and at least one of boron or phosphorus, and the non-metallic element includes carbon, nitrogen, oxygen, phosphorus, sulfur, or selenium.
Abstract:
Disclosed is an electrode active material including nanostructures including boron-doped alumina. An electrode including the nanostructures, an energy storage device including the electrode, and a method of preparing the electrode active material are also disclosed.
Abstract:
A heat exchanger is provided. The heat exchanger includes a target area that is a target for heat exchange; and a flow path structure. The flow path structure includes at least one inlet; at least one outlet; a first flow path connected to each of the at least one inlet and the at least one outlet, and extending along a first side of the target area; and a second flow path connected to each of the at least one inlet and the at least one outlet, and extending along a second side, different from the first side, of the target area.
Abstract:
A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.
Abstract:
A material synthesis apparatus may include a synthesis device configured to perform a synthesis of a material of a target product; a communication interface configured to receive a first synthesis method of the target product, the first synthesis method being calculated by an external apparatus using a previously trained synthesis prediction model; and a processor configured to: determine first commands for synthesizing the target product based on the first synthesis method, schedule an order in which the first commands are executed, and control the synthesis device based on the scheduled order.
Abstract:
A quantum dot device including an anode and a cathode facing each other, a quantum dot layer disposed between the anode and the cathode, and an electron transport layer disposed between the cathode and the quantum dot layer, wherein the quantum dot layer includes an emissive quantum dot emitting light in at least one part of a wavelength region in a visible region and a non-emissive quantum dot configured to not emit light in a visible region, and a difference between a lowest unoccupied molecular orbital (LUMO) energy level of the non-emissive quantum dot and a LUMO energy level of the electron transport layer is greater than or equal to about 0.5 electronvolts (eV).
Abstract:
An organometallic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.