公开(公告)号：US11834738B2

公开(公告)日：2023-12-05

申请号：US17956281

申请日：2022-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung Lee ,  Whankyun Kim ,  Eunsun Noh ,  Jeong-heon Park ,  Junho Jeong

IPC: C23C14/54 ,  C23C14/00 ,  G11B5/851 ,  H10B61/00 ,  H10N50/01

CPC classification number: C23C14/541 ,  C23C14/0057 ,  G11B5/851 ,  H10B61/00 ,  H10N50/01

Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

公开(公告)号：US09985202B2

公开(公告)日：2018-05-29

申请号：US15365977

申请日：2016-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong-heon Park ,  Se-chung Oh ,  Byoung-jae Bae ,  Jong-chul Park

IPC: H01L21/00 ,  H01L43/12 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of fabricating a memory device, the method including forming a first magnetization layer; forming a tunnel barrier layer on the first magnetization layer; forming a second magnetization layer on the tunnel barrier layer; forming a magnetic tunnel junction (MTJ) structure by patterning the first magnetization layer, the tunnel barrier layer, and the second magnetization layer; and forming a boron oxide in a sidewall of the MTJ structure by implanting boron.