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    Semiconductor devices including channel structures
    1.
    发明授权
    Semiconductor devices including channel structures 有权

    公开(公告)号：US10930664B2

    公开(公告)日：2021-02-23

    申请号：US16454293

    申请日：2019-06-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yoon Hwan Son ,  Seok Cheon Baek ,  Ji Sung Cheon

    IPC: H01L27/115 ,  H01L27/11578 ,  H01L27/11568 ,  H01L27/11565

    Abstract: A semiconductor device may include a substrate and a stacked structure in which a plurality of insulating layers and a plurality of interconnection layers are alternately stacked on the substrate. An isolation region may cross the stacked structure in a first direction. A plurality of first structures may extend into the stacked structure in a second direction perpendicular to the first direction. A plurality of first patterns may extend into the stacked structure in the second direction in the isolation region. Bottoms of the plurality of first patterns may be farther from an upper surface of the substrate than bottoms of the plurality of channel structures.

    SEMICONDUCTOR DEVICES INCLUDING CHANNEL STRUCTURES
    2.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING CHANNEL STRUCTURES 审中-公开

    公开(公告)号：US20200185402A1

    公开(公告)日：2020-06-11

    申请号：US16454293

    申请日：2019-06-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： YOON HWAN SON ,  Seok Cheon Baek ,  Ji Sung Cheon

    IPC: H01L27/11578 ,  H01L27/11565 ,  H01L27/11568

    Abstract: A semiconductor device may include a substrate and a stacked structure in which a plurality of insulating layers and a plurality of interconnection layers are alternately stacked on the substrate. An isolation region may cross the stacked structure in a first direction. A plurality of first structures may extend into the stacked structure in a second direction perpendicular to the first direction. A plurality of first patterns may extend into the stacked structure in the second direction in the isolation region. Bottoms of the plurality of first patterns may be farther from an upper surface of the substrate than bottoms of the plurality of channel structures.

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11195856B2

    公开(公告)日：2021-12-07

    申请号：US16801278

    申请日：2020-02-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yoon Hwan Son ,  Ji Sung Cheon

    IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11573 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11556

    Abstract: A semiconductor device includes a first substrate in which a first region and a second region are defined, a first stack structure with first gate electrodes displaced and stacked sequentially on the first substrate, a second stack structure with second gate electrodes displaced and stacked sequentially on the first stack structure, a junction layer disposed between the first stack structure and the second stack structure, a first interlayer insulating layer disposed on a side surface of the first stack structure, a second interlayer insulating layer covering the second stack structure, a first channel hole that penetrates through structure(s) and/or layer(s) and a second channel hole that penetrates through structure(s) and/or layer(s). A height of the second portion of the first channel hole in a second direction orthogonal to the first direction is less than a height of the second portion of the second channel hole in the second direction.

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