Semiconductor device
    5.
    发明授权

    公开(公告)号:US11637110B2

    公开(公告)日:2023-04-25

    申请号:US17580811

    申请日:2022-01-21

    摘要: A semiconductor device includes a substrate having a conductive region and an insulating region; gate electrodes including sub-gate electrodes spaced apart from each other and stacked in a first direction perpendicular to an upper surface of the substrate and extending in a second direction perpendicular to the first direction and gate connectors connecting the sub-gate electrodes disposed on the same level; channel structures penetrating through the gate electrodes and extending in the conductive region of the substrate; and a first dummy channel structure penetrating through the gate electrodes and extending in the insulating region of the substrate and disposed adjacent to at least one side of the gate connectors in a third direction perpendicular to the first and second directions.

    Memory device for reducing resources used for training

    公开(公告)号:US11574670B2

    公开(公告)日:2023-02-07

    申请号:US17690137

    申请日:2022-03-09

    摘要: A memory device includes: first power pins in a first power area and configured to receive a first power voltage; data pins configured to transmit or receive data signals, the data pins being arranged in a first region and in a second region each including the first power area; control pins configured to transmit or receive control signals in the first region and in the second region; second power pins in a second power area between the first region and the second region and configured to receive a second power voltage different from the first power voltage; and ground pins in the second power area and configured to receive a ground voltage.

    Semiconductor memory device and method of manufacturing the same

    公开(公告)号:US10692881B2

    公开(公告)日:2020-06-23

    申请号:US15982213

    申请日:2018-05-17

    摘要: A semiconductor memory device includes a body conductive layer that includes a cell array portion and a peripheral circuit portion, an electrode structure on the cell array portion of the body conductive layer, vertical structures that penetrate the electrode structure, a residual substrate on the peripheral circuit portion of the body conductive layer, and a connection conductive pattern penetrating the residual substrate. The electrode structure includes a plurality of electrode that are stacked on top of each other. The vertical structures are connected to the cell array portion of the body conductive layer. The connection conductive pattern is connected to the peripheral circuit portion of the body conductive layer.

    Display device and control method therefor

    公开(公告)号:US11955045B2

    公开(公告)日:2024-04-09

    申请号:US18115480

    申请日:2023-02-28

    IPC分类号: G09G3/20 G09G3/32

    摘要: A display device includes a communicator; a memory; a display panel including a plurality of display modules; and one or more processors. The processor receives position information and corrected pixel value of a first area in a first display module; identifies a pixel corresponding to the first area based on the position information; obtains a correction coefficient corresponding to the identified pixel based on the corrected pixel value and an output pixel value of the identified pixel; obtains correction coefficients corresponding to each of a plurality of remaining pixels based on the correction coefficient and a distance between the identified pixel and each of the remaining pixels and stores same in a memory; processes an input image based on the correction coefficients, and controls the display panel to display the processed input image. The device thereby improves display uniformity between display modules more effectively.