公开(公告)号：US20180163130A1

公开(公告)日：2018-06-14

申请号：US15804422

申请日：2017-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo Jin KIM ,  Hyo Sun LEE ,  Jin Hye BAE ,  Jung Hun LIM ,  Yong Jae CHOI

IPC: C09K13/08 ,  H01L21/306

CPC classification number: C09K13/08 ,  B82Y10/00 ,  C09K13/00 ,  H01L21/30604 ,  H01L21/32134 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785

Abstract: An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).

公开(公告)号：US20190390111A1

公开(公告)日：2019-12-26

申请号：US16543999

申请日：2019-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo Jin KIM ,  Hyo Sun LEE ,  Jin Hye BAE ,  Jung Hun LIM ,  Yong Jae CHOI

IPC: C09K13/08 ,  B82Y10/00 ,  H01L29/78 ,  H01L29/775 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/306 ,  C09K13/00

Abstract: An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).