公开(公告)号：US20190390111A1

公开(公告)日：2019-12-26

申请号：US16543999

申请日：2019-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo Jin KIM ,  Hyo Sun LEE ,  Jin Hye BAE ,  Jung Hun LIM ,  Yong Jae CHOI

IPC: C09K13/08 ,  B82Y10/00 ,  H01L29/78 ,  H01L29/775 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L21/3213 ,  H01L21/306 ,  C09K13/00

Abstract: An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).

公开(公告)号：US20180148645A1

公开(公告)日：2018-05-31

申请号：US15809597

申请日：2017-11-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Sun LEE ,  Ho Young KIM ,  Sang Won BAE ,  Min Goo KIM ,  Jung Hun LIM ,  Yong Jae CHOI

IPC: C09K13/06 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/06 ,  C09K13/04 ,  C09K13/10 ,  H01L21/31111 ,  H01L21/32134

Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).

公开(公告)号：US20180163130A1

公开(公告)日：2018-06-14

申请号：US15804422

申请日：2017-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo Jin KIM ,  Hyo Sun LEE ,  Jin Hye BAE ,  Jung Hun LIM ,  Yong Jae CHOI

IPC: C09K13/08 ,  H01L21/306

CPC classification number: C09K13/08 ,  B82Y10/00 ,  C09K13/00 ,  H01L21/30604 ,  H01L21/32134 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/42364 ,  H01L29/42392 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/785

Abstract: An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).