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公开(公告)号:US20180163130A1
公开(公告)日:2018-06-14
申请号:US15804422
申请日:2017-11-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Soo Jin KIM , Hyo Sun LEE , Jin Hye BAE , Jung Hun LIM , Yong Jae CHOI
IPC: C09K13/08 , H01L21/306
CPC classification number: C09K13/08 , B82Y10/00 , C09K13/00 , H01L21/30604 , H01L21/32134 , H01L29/0653 , H01L29/0673 , H01L29/42364 , H01L29/42392 , H01L29/66 , H01L29/66439 , H01L29/66545 , H01L29/66795 , H01L29/775 , H01L29/785
Abstract: An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
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公开(公告)号:US20220320317A1
公开(公告)日:2022-10-06
申请号:US17693532
申请日:2022-03-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Chang Ju YEOM , Chang Su JEON , Jung Min OH , Sang Won BAE , Jae Sung LEE , Hyo San LEE , Jung Hun LIM
Abstract: A method for manufacturing a semiconductor device, the method including forming a fin type pattern including a lower pattern and an upper pattern on a substrate, the upper pattern including a plurality of sacrificial layers and a plurality of sheet patterns alternately stacked on the lower pattern; forming a field insulating film on the substrate and the fin type pattern such that the field insulation film covers side walls of the lower pattern; forming a passivation film on the field insulating film such that the passivation film extends along an upper surface of the field insulating film; and removing the plurality of sacrificial layers after forming the passivation film.
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公开(公告)号:US20210254224A1
公开(公告)日:2021-08-19
申请号:US17313534
申请日:2021-05-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jungah KIM , Mihyun PARK , Jinwoo LEE , Keonyoung KIM , Hyosan LEE , Hoon HAN , Jin Uk LEE , Jung Hun LIM
IPC: C23F1/26 , C23F1/30 , H01L21/311 , H01L21/306
Abstract: A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.
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公开(公告)号:US20210238478A1
公开(公告)日:2021-08-05
申请号:US17032306
申请日:2020-09-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jae Sung LEE , Jung Hun LIM , Mihyun PARK , Changsu JEON , Jung-Min OH , Subin OH , Hyosan LEE
IPC: C09K13/06 , H01L21/3213 , H01L21/28
Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.
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公开(公告)号:US20200087798A1
公开(公告)日:2020-03-19
申请号:US16574372
申请日:2019-09-18
Applicant: SAMSUNG ELECTRONICS CO., LTD. , SOULBRAIN CO., LTD.
Inventor: Jungah KIM , Mihyun PARK , Jinwoo LEE , Keonyoung KIM , Hyosan LEE , Hoon HAN , Jin Uk LEE , Jung Hun LIM
IPC: C23F1/26 , H01L21/306 , H01L21/311 , C23F1/30
Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.
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公开(公告)号:US20190390111A1
公开(公告)日:2019-12-26
申请号:US16543999
申请日:2019-08-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Soo Jin KIM , Hyo Sun LEE , Jin Hye BAE , Jung Hun LIM , Yong Jae CHOI
IPC: C09K13/08 , B82Y10/00 , H01L29/78 , H01L29/775 , H01L29/66 , H01L29/423 , H01L29/06 , H01L21/3213 , H01L21/306 , C09K13/00
Abstract: An etching composition may include a peracetic acid mixture, a fluorine compound, an organic solvent (e.g., acetate-series organic solvent), and water. The etching composition may be used to selectively etch silicon-germanium (SiGe).
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公开(公告)号:US20190198315A1
公开(公告)日:2019-06-27
申请号:US16265709
申请日:2019-02-01
Applicant: Samsung Electronics Co., Ltd. , Soulbrain Co., Ltd.
Inventor: Hoyoung KIM , Hyo-Sun LEE , Soojin KIM , Keonyoung KIM , JINHYE BAE , HOON HAN , Tae Soo KWON , Jung Hun LIM
CPC classification number: H01L21/02068 , C11D7/08 , C11D7/261 , C11D7/264 , C11D7/266 , C11D7/3209 , C11D7/3218 , C11D11/0047 , H01L21/02057 , H01L21/304 , H01L21/30604 , H01L21/30625 , H01L21/6835 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/81 , H01L2221/68327 , H01L2221/68381 , H01L2224/03002 , H01L2224/0401 , H01L2224/0557 , H01L2224/05624 , H01L2224/05647 , H01L2224/06181 , H01L2224/1181 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/16145 , H01L2224/16227 , H01L2224/17181 , H01L2224/81193 , H01L2224/81815 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/10252 , H01L2924/10253 , H01L2924/15311 , H01L2924/3512 , H01L2924/37001 , H01L2224/11 , H01L2224/03
Abstract: Embodiments of the inventive concepts provide a method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer. The method includes preparing a semiconductor substrate to which an adhesive layer adheres, removing the adhesive layer from the semiconductor substrate, and applying a cleaning composition to the semiconductor substrate to remove a residue of the adhesive layer. The cleaning composition includes a solvent including a ketone compound and having a content that is equal to or greater than 40 wt % and less thaadminn 90 wt %, quaternary ammonium salt, and primary amine.
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公开(公告)号:US20180148645A1
公开(公告)日:2018-05-31
申请号:US15809597
申请日:2017-11-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyo Sun LEE , Ho Young KIM , Sang Won BAE , Min Goo KIM , Jung Hun LIM , Yong Jae CHOI
IPC: C09K13/06 , H01L21/311 , H01L21/3213
CPC classification number: C09K13/06 , C09K13/04 , C09K13/10 , H01L21/31111 , H01L21/32134
Abstract: An etching composition selectively removes a titanium nitride film from a stacked conductive film structure including a titanium nitride (TiN) film and a tantalum nitride (TaN) film. The etching composition configured to etch titanium nitride (TiN) includes 5 wt % to 30 wt % of hydrogen peroxide, 15 wt % to 50 wt % of acid compound, and 0.001 wt % to 5 wt % of corrosion inhibitor, with respect to a total weight of the etching composition, wherein the acid compound includes at least one of phosphoric acid (H3PO4), nitric acid (HNO3), hydrochloric acid (HCl), hydroiodic acid (HI), hydrobromic acid (HBr), perchloric acid (HNO4), silicic acid (H2SiO3), boric acid (H3BO3), acetic acid (CH3COOH), propionic acid (C2H5COOH), lactic acid (CH3CH(OH)COOH), and glycolic acid (HOCH2COOH).
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