公开(公告)号：US12120883B2

公开(公告)日：2024-10-15

申请号：US17666448

申请日：2022-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Yong Park ,  Jin-Hong Park ,  Sungjoo Lee

IPC: H10B51/20 ,  H01L29/51 ,  H01L29/78 ,  H10B51/30

CPC classification number: H10B51/20 ,  H01L29/516 ,  H01L29/78391 ,  H10B51/30

Abstract: A semiconductor memory device capable of improving performance by the use of a charge storage layer including a ferroelectric material is provided. The semiconductor memory device includes a substrate, a tunnel insulating layer contacting the substrate, on the substrate, a charge storage layer contacting the tunnel insulating layer and including a ferroelectric material, on the tunnel insulating layer, a barrier insulating layer contacting the charge storage layer, on the charge storage layer, and a gate electrode contacting the barrier insulating layer, on the barrier insulating layer.

公开(公告)号：US11670714B2

公开(公告)日：2023-06-06

申请号：US17338400

申请日：2021-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kilsu Jung ,  Jin-Hong Park ,  Keun Heo ,  Sungjun Kim

IPC: H01L29/78 ,  H01L29/267 ,  H01L29/51 ,  H01L29/76 ,  H01L29/45 ,  H10K10/84 ,  H10K10/46

CPC classification number: H01L29/78391 ,  H01L29/267 ,  H01L29/45 ,  H01L29/516 ,  H01L29/7606 ,  H10K10/466 ,  H10K10/472 ,  H10K10/84

Abstract: A negative differential resistance device includes a dielectric layer having a first surface and a second surface opposing the first surface, a first semiconductor layer that includes a first degenerated layer that is on the first surface of the dielectric layer and has a first polarity, a second semiconductor layer that includes a second degenerated layer that has a region that overlaps the first semiconductor layer and has a second polarity, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a third electrode on the second surface of the dielectric layer and which has a region overlapping at least one of the first semiconductor layer or the second semiconductor layer.

公开(公告)号：US12206021B2

公开(公告)日：2025-01-21

申请号：US18307914

申请日：2023-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kilsu Jung ,  Jin-Hong Park ,  Keun Heo ,  Sungjun Kim

IPC: H01L29/78 ,  H01L29/267 ,  H01L29/45 ,  H01L29/51 ,  H01L29/76 ,  H10K10/46 ,  H10K10/84

Abstract: A negative differential resistance device includes a dielectric layer having a first surface and a second surface opposing the first surface, a first semiconductor layer that includes a first degenerated layer that is on the first surface of the dielectric layer and has a first polarity, a second semiconductor layer that includes a second degenerated layer that has a region that overlaps the first semiconductor layer and has a second polarity, a first electrode electrically connected to the first semiconductor layer, a second electrode electrically connected to the second semiconductor layer, and a third electrode on the second surface of the dielectric layer and which has a region overlapping at least one of the first semiconductor layer or the second semiconductor layer.

公开(公告)号：US12230651B2

公开(公告)日：2025-02-18

申请号：US17668566

申请日：2022-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungjun Kim ,  Jin-Hong Park ,  Sunghun Lee ,  Keun Heo

IPC: H01L27/14 ,  H01L27/146

Abstract: A photodetector includes a gate electrode extending in a first direction, a ferroelectric layer on the gate electrode and maintaining a state of polarization formed by a gate voltage applied to the gate electrode, a light absorbing layer on the ferroelectric layer and extending in a second direction intersecting the gate electrode, the light absorbing layer including a two-dimensional (2D) material of a layered structure, a source electrode on the ferroelectric layer and connected to a first end of the light absorbing layer, and a drain electrode on the ferroelectric layer and connected to the a second end of the light absorbing layer.

公开(公告)号：US20240088239A1

公开(公告)日：2024-03-14

申请号：US18199516

申请日：2023-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Yong PARK ,  Jin-Hong Park ,  Ju-Hee Lee

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device includes a substrate. A first channel pattern is disposed on the substrate. The first channel pattern includes a first side and a second side opposite to each other in a first direction. A first gate electrode is disposed on the first side of the first channel pattern. A first source/drain electrode is disposed on the first side of the first channel pattern. A second source/drain electrode is disposed on the second side of the first channel pattern. The first gate electrode overlaps the second source/drain electrode in the first direction.

公开(公告)号：US09632437B2

公开(公告)日：2017-04-25

申请号：US13942854

申请日：2013-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Hong Park ,  Jeong-Ho Yeo ,  Joo-On Park ,  Chang-Min Park

IPC: G03F7/20

CPC classification number: G03F7/70916

Abstract: Provided are a lithography apparatus, a method for lithography and a stage system. The lithography apparatus includes a reticle stage having a reticle, at least one nozzle on at least one surface of the reticle stage and configured to allow shielding gas to flow to a surface of the reticle to form an air curtain, and a gas supply unit configured to supply the nozzle with the shielding gas.