公开(公告)号：US20240414925A1

公开(公告)日：2024-12-12

申请号：US18436574

申请日：2024-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Seunghee Lee ,  Jin-Seong Park ,  Jihyun Kho ,  Dong-Gyu Kim ,  Yurim Kim ,  Yong-Suk Tak

IPC: H10B53/20 ,  H01L21/28 ,  H01L23/528 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H10B51/10 ,  H10B51/20 ,  H10B53/10

Abstract: A semiconductor device has, in a gate insulating layer, in an XPS spectrum of O 1s obtained by an X-ray photoelectron spectroscopy (XPS) using a monochromatic aluminum Kα (1486.6 eV) source, a ratio (%) of an Al—O peak observed in a binding energy of about 530.3 eV to about 531.6 eV to all peaks of greater than or equal to about 80%.

公开(公告)号：US10373661B2

公开(公告)日：2019-08-06

申请号：US15479971

申请日：2017-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hae-Suk Lee ,  Reum Oh ,  Jin-Seong Park ,  Seung-Han Woo

IPC: G11C5/02 ,  G11C5/06 ,  G11C7/06 ,  G11C7/10 ,  H04L7/033 ,  H03K19/21 ,  G11C7/22 ,  G11C7/12 ,  H03K3/356 ,  H01L25/065

Abstract: A stacked semiconductor device includes a plurality of semiconductor dies stacked in a vertical direction, first and second signal paths, a transmission unit and a reception unit. The first and second signal paths electrically connect the plurality of semiconductor dies, where each of the first signal path and the second signal path includes at least one through-substrate via. The transmission unit generates a first driving signal and a second driving signal in synchronization with transitioning timing of a transmission signal to output the first driving signal to the first signal path and output the second driving signal to the second signal path. The reception unit receives a first attenuated signal corresponding to the first driving signal from the first signal path and receives a second attenuated signal corresponding to the second driving signal from the second signal path to generate a reception signal corresponding to the transmission signal.