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公开(公告)号:US09941247B2
公开(公告)日:2018-04-10
申请号:US14790451
申请日:2015-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hae-Suk Lee , Kyo-Min Sohn , Ho-Young Song , Sang-Hoon Shin , Han-Vit Jung
IPC: G11C11/4093 , H01L25/065 , G11C7/10
CPC classification number: H01L25/0657 , G11C7/1066 , G11C7/1069 , H01L2924/0002 , H01L2924/00
Abstract: A memory device including a stack semiconductor device including; an upper substrate vertically stacked on a lower substrate, the upper substrate including N upper through-silicon vias (UTSV) and upper driving circuits, and the lower substrate including N lower through-silicon vias (LTSV) and lower driving circuits, wherein each one of the upper driving circuits is stagger-connected between a Kth UTSV and a (K+1)th LTSV, where ‘N’ is a natural number greater than 1, and ‘K’ is a natural number ranging from 1 to (N−1).
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公开(公告)号:USRE50078E1
公开(公告)日:2024-08-13
申请号:US17546251
申请日:2021-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang-Hoon Shin , Hae-Suk Lee , Han-Vit Jung , Kyo-Min Sohn
CPC classification number: G06F11/1423 , G06F11/0703 , G06F11/0793 , G06F11/0796 , G06F11/142 , G06F11/1616 , G06F11/18 , G06F11/2002 , G06F11/2017
Abstract: A device, system, and/or method includes an internal circuit configured to perform at least one function, an input-output terminal set and a repair circuit. The input-output terminal set includes a plurality of normal input-output terminals connected to an external device via a plurality of normal signal paths and at least one repair input-output terminal selectively connected to the external device via at least one repair signal path. The repair circuit repairs at least one failed signal path included in the normal signal paths based on a mode signal and fail information signal, where the mode signal represents whether to use the repair signal path and the fail information signal represents fail information on the normal signal paths. Using the repair circuit, various systems adopting different repair schemes may be repaired and cost of designing and manufacturing the various systems may be reduced.
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公开(公告)号:US10296414B2
公开(公告)日:2019-05-21
申请号:US15650096
申请日:2017-07-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang-Hoon Shin , Hae-Suk Lee , Han-Vit Jung , Kyo-Min Sohn
Abstract: A device, system, and/or method includes an internal circuit configured to perform at least one function, an input-output terminal set and a repair circuit. The input-output terminal set includes a plurality of normal input-output terminals connected to an external device via a plurality of normal signal paths and at least one repair input-output terminal selectively connected to the external device via at least one repair signal path. The repair circuit repairs at least one failed signal path included in the normal signal paths based on a mode signal and fail information signal, where the mode signal represents whether to use the repair signal path and the fail information signal represents fail information on the normal signal paths. Using the repair circuit, various systems adopting different repair schemes may be repaired and cost of designing and manufacturing the various systems may be reduced.
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公开(公告)号:US10678631B2
公开(公告)日:2020-06-09
申请号:US16032368
申请日:2018-07-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sang-Hoon Shin , Hae-Suk Lee , Han-Vit Jung , Kyo-Min Sohn
Abstract: A device, system, and/or method includes an internal circuit configured to perform at least one function, an input-output terminal set and a repair circuit. The input-output terminal set includes a plurality of normal input-output terminals connected to an external device via a plurality of normal signal paths and at least one repair input-output terminal selectively connected to the external device via at least one repair signal path. The repair circuit repairs at least one failed signal path included in the normal signal paths based on a mode signal and fail information signal, where the mode signal represents whether to use the repair signal path and the fail information signal represents fail information on the normal signal paths. Using the repair circuit, various systems adopting different repair schemes may be repaired and cost of designing and manufacturing the various systems may be reduced.
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公开(公告)号:US10373661B2
公开(公告)日:2019-08-06
申请号:US15479971
申请日:2017-04-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hae-Suk Lee , Reum Oh , Jin-Seong Park , Seung-Han Woo
IPC: G11C5/02 , G11C5/06 , G11C7/06 , G11C7/10 , H04L7/033 , H03K19/21 , G11C7/22 , G11C7/12 , H03K3/356 , H01L25/065
Abstract: A stacked semiconductor device includes a plurality of semiconductor dies stacked in a vertical direction, first and second signal paths, a transmission unit and a reception unit. The first and second signal paths electrically connect the plurality of semiconductor dies, where each of the first signal path and the second signal path includes at least one through-substrate via. The transmission unit generates a first driving signal and a second driving signal in synchronization with transitioning timing of a transmission signal to output the first driving signal to the first signal path and output the second driving signal to the second signal path. The reception unit receives a first attenuated signal corresponding to the first driving signal from the first signal path and receives a second attenuated signal corresponding to the second driving signal from the second signal path to generate a reception signal corresponding to the transmission signal.
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