公开(公告)号：US08828761B2

公开(公告)日：2014-09-09

申请号：US13801903

申请日：2013-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Joon Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Yung Ho Ryu ,  Tae Hun Kim ,  Sang Yeob Song

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/60

Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法，包括：在生长衬底上形成具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在一部分中形成沟槽，以将发光结构分成单独的发光结构。 沟槽具有使得生长衬底不暴露的深度。 在发光结构上设置有支撑基板。 生长衬底与发光结构分离。 将发光结构切割成单独的半导体发光器件。

公开(公告)号：US20130244356A1

公开(公告)日：2013-09-19

申请号：US13801903

申请日：2013-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Joon Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Yung Ho Ryu ,  Tae Hun Kim ,  Sang Yeob Song

IPC: H01L33/00 ,  H01L33/60

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/60

Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法，包括：在生长衬底上形成具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在一部分中形成沟槽，以将发光结构分成单独的发光结构。 沟槽具有使得生长衬底不暴露的深度。 在发光结构上设置有支撑基板。 生长衬底与发光结构分离。 将发光结构切割成单独的半导体发光器件。