公开(公告)号：US20130244356A1

公开(公告)日：2013-09-19

申请号：US13801903

申请日：2013-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Joon Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Yung Ho Ryu ,  Tae Hun Kim ,  Sang Yeob Song

IPC: H01L33/00 ,  H01L33/60

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/60

Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法，包括：在生长衬底上形成具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在一部分中形成沟槽，以将发光结构分成单独的发光结构。 沟槽具有使得生长衬底不暴露的深度。 在发光结构上设置有支撑基板。 生长衬底与发光结构分离。 将发光结构切割成单独的半导体发光器件。

公开(公告)号：US09305906B2

公开(公告)日：2016-04-05

申请号：US14336973

申请日：2014-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pun Jae Choi ,  Sang Bum Lee ,  Jin Bock Lee ,  Yu Seung Kim ,  Sang Yeob Song

IPC: H01L33/56 ,  H01L25/13 ,  H01L33/20 ,  H01L33/38 ,  H01L33/00 ,  H01L33/40 ,  H01L33/44 ,  H01L33/48 ,  H01L33/54 ,  H05B33/08 ,  H01L25/075 ,  H01L33/50

CPC classification number: H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

公开(公告)号：US09548426B2

公开(公告)日：2017-01-17

申请号：US14720698

申请日：2015-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myeong Ha Kim ,  Chan Mook Lim ,  Masaaki Sofue ,  Sang Yeob Song ,  Mi Jeong Yun

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/50

CPC classification number: H01L33/46 ,  H01L33/50 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.

Abstract translation: 一种半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构以及设置在发光结构上的选择性透射反射层，并且包括 具有交替层叠至少一次的具有不同光学厚度的多个电介质层。 具有最大光学厚度和具有最小光学厚度的介电层的光学厚度的介电层的光学厚度的总和在0.75至0.80的范围内。

公开(公告)号：US08828761B2

公开(公告)日：2014-09-09

申请号：US13801903

申请日：2013-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Joon Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Yung Ho Ryu ,  Tae Hun Kim ,  Sang Yeob Song

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/60

Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法，包括：在生长衬底上形成具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在一部分中形成沟槽，以将发光结构分成单独的发光结构。 沟槽具有使得生长衬底不暴露的深度。 在发光结构上设置有支撑基板。 生长衬底与发光结构分离。 将发光结构切割成单独的半导体发光器件。

公开(公告)号：US09570660B2

公开(公告)日：2017-02-14

申请号：US14799675

申请日：2015-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In Sim ,  Sang Yeob Song ,  Jong Hoon Ha ,  Gi Bum Kim ,  Seung Woo Choi

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/16245

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.

Abstract translation: 提供了一种半导体发光器件。 半导体发光器件可以包括：发光结构，包括具有被划分为第一和第二区域的上表面的第一导电型半导体层，顺序地设置在第二区域的第二区域上的有源层和第二导电类型半导体层 第一导电型半导体层; 设置在所述第一导电型半导体层的所述第一区域上的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 第一电极焊盘，其电连接到所述第一接触电极并且具有设置在所述第二接触电极上的至少一部分; 电连接到第二接触电极的第二电极焊盘; 以及插入在第一电极焊盘和第二接触电极之间的多层反射结构，并且包括具有不同折射率并交替堆叠的多个电介质层。