公开(公告)号：US20130244356A1

公开(公告)日：2013-09-19

申请号：US13801903

申请日：2013-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Joon Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Yung Ho Ryu ,  Tae Hun Kim ,  Sang Yeob Song

IPC: H01L33/00 ,  H01L33/60

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/60

Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法，包括：在生长衬底上形成具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在一部分中形成沟槽，以将发光结构分成单独的发光结构。 沟槽具有使得生长衬底不暴露的深度。 在发光结构上设置有支撑基板。 生长衬底与发光结构分离。 将发光结构切割成单独的半导体发光器件。

公开(公告)号：US09236304B2

公开(公告)日：2016-01-12

申请号：US14150713

申请日：2014-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hun Kim ,  Sung Joon Kim ,  Su Yeol Lee ,  Seung Hwan Lee ,  Tae Sung Jang

IPC: H01L21/00 ,  H01L21/78 ,  H01L33/62 ,  H01L23/00 ,  H01L33/00 ,  H01L33/52 ,  H01L33/60

CPC classification number: H01L21/78 ,  H01L24/18 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法包括在衬底上形成多个半导体发光器件，所述半导体发光器件具有形成在其上表面上的至少一个电极焊盘; 通过在每个半导体发光器件的电极焊盘上形成凸起芯，形成一个导电凸块，并形成一个包围凸块的反射凸块; 在所述多个半导体发光器件上形成含有荧光体的树脂封装部，以包围所述导电凸块; 抛光树脂封装部分以将导电凸块的凸起芯露出到树脂封装部分的上表面; 以及通过在半导体发光器件之间切割树脂封装部分来形成单独的半导体发光器件。

公开(公告)号：US08828761B2

公开(公告)日：2014-09-09

申请号：US13801903

申请日：2013-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Joon Kim ,  Tae Sung Jang ,  Jong Gun Woo ,  Yung Ho Ryu ,  Tae Hun Kim ,  Sang Yeob Song

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/60

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/60

Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法，包括：在生长衬底上形成具有第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 在一部分中形成沟槽，以将发光结构分成单独的发光结构。 沟槽具有使得生长衬底不暴露的深度。 在发光结构上设置有支撑基板。 生长衬底与发光结构分离。 将发光结构切割成单独的半导体发光器件。

公开(公告)号：US10211372B1

公开(公告)日：2019-02-19

申请号：US15939909

申请日：2018-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Hwan Kim ,  Sung Joon Kim ,  Su Hyun Jo ,  Seung Hwan Lee ,  Tae Sung Jang

IPC: H01L21/78 ,  H01L33/38 ,  H01L27/15 ,  H01L33/44 ,  H01L23/544 ,  H01L21/784 ,  H01L21/782

Abstract: A semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, sequentially stacked on a substrate along a first direction, and including an exposed region exposing the first conductivity-type semiconductor layer. A first contact electrode is in the exposed region, a second contact electrode is on the second conductivity-type semiconductor layer, and an insulating layer covers the light emitting structure. Separate electrode pads penetrate the insulating layer to be electrically connected to the first contact electrode and the second contact electrode. A side surface of at least one of the first and second electrode pads may extend to be coplanar with a side surface of the substrate along the first direction.

公开(公告)号：US09087932B2

公开(公告)日：2015-07-21

申请号：US13948797

申请日：2013-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hun Kim ,  Sung Joon Kim ,  Yong Il Kim ,  Yung Ho Ryu ,  Myeong Rak Son ,  Su Yeol Lee ,  Seung Hwan Lee ,  Tae Sung Jang ,  Su Min Hwangbo

IPC: H01L33/00 ,  H01L21/00

CPC classification number: H01L33/007 ,  H01L33/0079

Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.

Abstract translation: 一种制造半导体发光器件的方法包括在半导体单晶生长衬底上形成隔离图案。 在由隔离图案限定的半导体单晶生长基板的一个芯片单元区域中依次生长第一导电型半导体层，有源层和第二导电型半导体层，并且形成反射金属层以覆盖 发光结构和隔离图案。 在反射金属层上形成支撑基板，从发光结构去除半导体单晶生长基板。 然后将支撑衬底切割成单个发光器件。