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公开(公告)号：US11487576B2
公开(公告)日：2022-11-01
申请号：US17318554
申请日：2021-05-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sng-Hoon Park , In-Soo Kim , Jong-Won Kim , Sang-Kwon Moon
Abstract: A memory controller is disclosed. The memory controller is configured to control the execution of a suspend operation by a memory device. The memory controller includes: a processor configured to output an operation control signal when the memory device is performing a program/erase operation; and a suspend operation manager configured to output suspend mode change information based on the operation control signal and suspend information, wherein the processor is further configured to control the memory controller such that the memory controller outputs a suspend mode change command and a suspend command based on the suspend mode change information.
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公开(公告)号：US11113149B2
公开(公告)日：2021-09-07
申请号：US16744561
申请日：2020-01-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-Won Kim , Dong-Young Seo , Dong-Gun Kim
Abstract: A method of operating a storage device includes receiving a first logical address from a host, determining whether first metadata stored in a volatile memory of the storage device and associated with the first logical address is corrupted, processing the first metadata as an uncorrectable error when the first metadata is determined to be corrupted, providing an error message to the host indicating that an operation cannot be performed on data associated with the first logical address when the first metadata is processed as the uncorrectable error, after the providing of the error message, receiving a second logical address from the host, determining whether second metadata stored in the volatile memory and associated with the second logical address is corrupted, and performing an operation of accessing the non-volatile memory based on the second metadata, when the second metadata is not determined to be corrupted.
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公开(公告)号：US10545830B2
公开(公告)日：2020-01-28
申请号：US15850915
申请日：2017-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-Won Kim , Dong-Young Seo , Dong-Gun Kim
Abstract: A method of operating a storage device includes receiving a first logical address from a host, determining whether first metadata stored in a volatile memory of the storage device and associated with the first logical address is corrupted, processing the first metadata as an uncorrectable error when the first metadata is determined to be corrupted, providing an error message to the host indicating that an operation cannot be performed on data associated with the first logical address when the first metadata is processed as the uncorrectable error, after the providing of the error message, receiving a second logical address from the host, determining whether second metadata stored in the volatile memory and associated with the second logical address is corrupted, and performing an operation of accessing the non-volatile memory based on the second metadata, when the second metadata is not determined to be corrupted.
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Patent Agency Ranking
公开(公告)号：US11036544B2
公开(公告)日：2021-06-15
申请号：US16717720
申请日：2019-12-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sng-Hoon Park , In-Soo Kim , Jong-Won Kim , Sang-Kwon Moon
Abstract: A memory controller is disclosed. The memory controller is configured to control the execution of a suspend operation by a memory device. The memory controller includes: a processor configured to output an operation control signal when the memory device is performing a program/erase operation; and a suspend operation manager configured to output suspend mode change information based on the operation control signal and suspend information, wherein the processor is further configured to control the memory controller such that the memory controller outputs a suspend mode change command and a suspend command based on the suspend mode change information.
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公开(公告)号：US20180225176A1
公开(公告)日：2018-08-09
申请号：US15850915
申请日：2017-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jong-Won Kim , Dong-Young Seo , Dong-Gun Kim
Abstract: A method of operating a storage device includes receiving a first logical address from a host, determining whether first metadata stored in a volatile memory of the storage device and associated with the first logical address is corrupted, processing the first metadata as an uncorrectable error when the first metadata is determined to be corrupted, providing an error message to the host indicating that an operation cannot be performed on data associated with the first logical address when the first metadata is processed as the uncorrectable error, after the providing of the error message, receiving a second logical address from the host, determining whether second metadata stored in the volatile memory and associated with the second logical address is corrupted, and performing an operation of accessing the non-volatile memory based on the second metadata, when the second metadata is not determined to be corrupted.
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公开(公告)号：US09905568B2
公开(公告)日：2018-02-27
申请号：US15251580
申请日：2016-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong-Hoon Son , Jong-Won Kim , Chang-Seok Kang , Young-Woo Park , Jae-Duk Lee , Kyung-Hyun Kim , Byeong-Ju Kim , Phil-Ouk Nam , Kwang-Chul Park , Yeon-Sil Sohn , Jin-I Lee , Won-Bong Jung
IPC: H01L27/115 , H01L29/66 , H01L27/1157 , H01L27/11565 , H01L27/11582
CPC classification number: H01L27/1157 , H01L27/11565 , H01L27/11582 , H01L29/66833
Abstract: A nonvolatile memory device includes a conductive line disposed on a substrate and vertically extended from the substrate, a first channel layer disposed on the substrate and vertically extended from the substrate, wherein the first channel layer is spaced apart from the conductive line, a second channel layer vertically extended from the substrate, wherein the second channel layer is disposed between the first channel layer and the conductive line, a first gate electrode disposed between the conductive line and the second channel layer, wherein the first gate electrode includes a first portion having a first thickness and a second portion having a second thickness that is different from the first thickness, and a second gate electrode disposed between the first channel layer and the second channel layer, wherein the second gate electrode has the second thickness.
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公开(公告)号：US10199389B2
公开(公告)日：2019-02-05
申请号：US15485334
申请日：2017-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong-Won Kim , Chang-Seok Kang , Young-Woo Park , Jae-Goo Lee , Jae-Duk Lee
IPC: H01L27/1157 , H01L27/11582 , H01L27/11565 , H01L23/528
Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a channel structure that is located on a substrate and extends perpendicularly to the substrate, a conductive pattern that extends perpendicularly to the substrate and is spaced apart from the channel structure, an electrode structure that is located between the channel structure and the conductive pattern, and comprises a plurality of gate patterns and a plurality of insulation patterns that are alternately laminated. An insulating layer that contacts with a top surface of the conductive pattern is formed along side surfaces of the electrode structure. The top surface of the conductive pattern is formed to be lower than the top surface of the channel structure.
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公开(公告)号：US09646984B2
公开(公告)日：2017-05-09
申请号：US15264902
申请日：2016-09-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jong-Won Kim , Chang-Seok Kang , Young-Woo Park , Jae-Goo Lee , Jae-Duk Lee
IPC: H01L27/115 , H01L27/1157 , H01L27/11582
CPC classification number: H01L27/1157 , H01L27/11582
Abstract: A non-volatile memory device is provided. The non-volatile memory device includes a channel structure that is located on a substrate and extends perpendicularly to the substrate, a conductive pattern that extends perpendicularly to the substrate and is spaced apart from the channel structure, an electrode structure that is located between the channel structure and the conductive pattern, and comprises a plurality of gate patterns and a plurality of insulation patterns that are alternately laminated. An insulating layer that contacts with a top surface of the conductive pattern is formed along side surfaces of the electrode structure. The top surface of the conductive pattern is formed to be lower than the top surface of the channel structure.
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