公开(公告)号：US10482973B2

公开(公告)日：2019-11-19

申请号：US16014222

申请日：2018-06-21

Applicant: Samsung Electronics Co. Ltd.

Inventor： Jae-Yun Lee ,  Joon Soo Kwon ,  Byung Soo Kim ,  Sang-Soo Park ,  Il Han Park ,  Jong-Hoon Lee

IPC: G11C16/12 ,  H03K5/135 ,  G11C16/16 ,  G11C16/32 ,  G11C8/08 ,  G11C16/08 ,  H03K3/011 ,  G11C16/30 ,  G11C5/14 ,  G11C7/22 ,  G11C16/04

Abstract: A memory device can include: a memory cell array including a memory cell and a word line that is connected to the memory cell; a clock generator configured to generate a first pumping clock signal from a system clock signal; a charge pump configured to provide a pumping voltage signal using a power supply voltage and the first pumping clock signal; a compensation circuit configured to compensate for variations in a first reference clock signal in accordance with variations in the power supply voltage, and provide a compensated first reference clock signal; and a pass/fail (P/F) determining circuit configured to determine whether the word line is defective by comparing the first pumping clock signal and the compensated first reference clock signal while the pumping voltage signal is provided to the word line.

公开(公告)号：US10854250B2

公开(公告)日：2020-12-01

申请号：US15997964

申请日：2018-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Yun Lee ,  Joon Soo Kwon ,  Byung Soo Kim ,  Su-Yong Kim ,  Sang-Soo Park ,  Il Han Park ,  Kang-Bin Lee ,  Jong-Hoon Lee ,  Na-Young Choi

IPC: G11C8/08 ,  G11C29/12 ,  G11C16/30 ,  G11C16/08 ,  G11C16/34 ,  G11C16/10 ,  G11C16/04 ,  G06F3/06 ,  G11C5/14 ,  G11C16/12 ,  G11C16/14 ,  G11C29/02

Abstract: A memory device comprises a memory cell array including a first memory cell disposed on a substrate and a second memory cell above the first memory cell; a first word line connected to the first memory cell and a second word line connected to the second memory cell, the second word line disposed above the first word line; and a word line defect detection circuit configured to monitor a number of pulses of a pumping clock signal while applying a first voltage to the first word line to detect a defect of the first word line. The voltage generator is configured to apply a second voltage different from the first voltage to the second word line for programming the second memory cell when the number of pulses of the pumping clock signal is smaller than a reference value.