公开(公告)号：US09928902B2

公开(公告)日：2018-03-27

申请号：US15378397

申请日：2016-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Soo Kwon ,  Seung-Cheol Han ,  Sang-Won Hwang

IPC: G11C16/04 ,  G11C11/56 ,  G06F3/06 ,  G11C16/10 ,  G11C16/16 ,  G11C16/28 ,  G11C16/34

CPC classification number: G11C11/5628 ,  G06F3/0608 ,  G06F3/064 ,  G06F3/0652 ,  G06F3/0679 ,  G11C7/14 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/16 ,  G11C16/225 ,  G11C16/28 ,  G11C16/3445 ,  G11C16/3459

Abstract: In a method of operating a storage device including at least one nonvolatile memory device and a memory controller configured to control the at least one nonvolatile memory device, a boundary page of a first memory block among a plurality of memory blocks included in the at least one nonvolatile memory device is searched for, at least one clean page, in which data is not written, of the first memory block is searched for, a dummy program operation is performed on a portion of the boundary page and the at least one clean page, and an erase operation is performed on the first memory block.

公开(公告)号：US09672933B2

公开(公告)日：2017-06-06

申请号：US14733583

申请日：2015-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-Soo Kwon ,  Sang-Soo Park

IPC: G11C16/34 ,  G11C16/10 ,  G11C11/56 ,  G11C16/04

CPC classification number: G11C16/3459 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5621

Abstract: A method of programming a memory device includes programming a low bit to a memory cell included in a word line and a bit line based on a first verification condition, the low bit belonging to a group of bits including a high bit. The first verification condition is based on at least one of a first bit line current, a first develop time for verifying the programming of the low bit, and a first word line voltage. The method includes programming the high bit to the memory cell based on a second verification condition. The second verification condition is based on at least one of a second bit line current, a second develop time for verifying the programming of the high bit, and a second word line voltage.