公开(公告)号：US11279852B2

公开(公告)日：2022-03-22

申请号：US16912426

申请日：2020-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsung Seo ,  Chang Gil Kwon ,  Sung Pyo Lee ,  Dongchan Kim ,  Bo Yun Kim ,  Jun Ha Hwang

IPC: C09G1/18 ,  H01L21/321 ,  C09G1/02 ,  H01L21/306 ,  B24B1/00 ,  H01L21/304 ,  C09G1/00

Abstract: Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.

公开(公告)号：US11928363B2

公开(公告)日：2024-03-12

申请号：US17713599

申请日：2022-04-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Ha Hwang ,  Chul-Hwan Choo ,  Gye Sik Oh ,  Young Bin Lee ,  Sung Won Jo

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679

Abstract: A method of operating a host device to control a storage device which includes a register is provided. The method includes: providing the storage device with a partial array refresh setting indicating a non-masking segment among a masking segment and the non-masking segment; providing a refresh command to the storage device; and providing a write command for the masking segment to the storage device to control the storage device to store data while a partial array refresh is performed in the storage device based on the refresh command.