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公开(公告)号:US09318647B2
公开(公告)日:2016-04-19
申请号:US14490438
申请日:2014-09-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Bum Joon Kim , Seung Woo Choi , Sung Tae Kim , Young Min Park , Eun Deok Sim , Sung Pyo Lee
IPC: H01L33/00 , H01L21/78 , H01L21/762
CPC classification number: H01L33/0075 , H01L21/76251 , H01L21/7806 , H01L33/0066 , H01L33/0079 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.
Abstract translation: 制造半导体发光器件的方法包括在第一衬底上形成包括有源层的发光结构层。 第二衬底在高于室温的第一温度下结合到发光结构层。 在高于室温的第二温度下,将第一衬底从发光结构层去除。 将第二基板和发光结构冷却至室温。 第二基板的热膨胀系数与有源层的热膨胀系数不同。
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公开(公告)号:US11279852B2
公开(公告)日:2022-03-22
申请号:US16912426
申请日:2020-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor: Eunsung Seo , Chang Gil Kwon , Sung Pyo Lee , Dongchan Kim , Bo Yun Kim , Jun Ha Hwang
IPC: C09G1/18 , H01L21/321 , C09G1/02 , H01L21/306 , B24B1/00 , H01L21/304 , C09G1/00
Abstract: Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.
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