公开(公告)号：US11279852B2

公开(公告)日：2022-03-22

申请号：US16912426

申请日：2020-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsung Seo ,  Chang Gil Kwon ,  Sung Pyo Lee ,  Dongchan Kim ,  Bo Yun Kim ,  Jun Ha Hwang

IPC: C09G1/18 ,  H01L21/321 ,  C09G1/02 ,  H01L21/306 ,  B24B1/00 ,  H01L21/304 ,  C09G1/00

Abstract: Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.

公开(公告)号：US20180362806A1

公开(公告)日：2018-12-20

申请号：US15822117

申请日：2017-11-25

Applicant: Samsung Electronics Co., Ltd. ,  K.C.TECH CO., LTD

Inventor： Seung Ho PARK ,  Chang Gil Kwon ,  Sung Pyo LEE ,  Jun Ha HWANG ,  Sang Kyun KIM ,  Hye Sung PARK ,  Su Young SHIN ,  Woo In LEE ,  Yang Hee LEE ,  Jong Hyuk PARK ,  Il Young YOON

IPC: C09G1/02 ,  H01L21/3105

Abstract: Provided are a chemical mechanical polishing (CMP) slurry composition and a method of fabricating a semiconductor device using the same. The chemical mechanical polishing (CMP) slurry composition includes abrasive particles, a first cationic compound which comprises at least any one of an amino acid, a polyalkylene glycol, a polymer polysaccharide to which a glucosamine compound is bonded, and a polymer containing an amine group, a second cationic compound which comprises an organic acid, and a nonionic compound which comprises polyetheramine.