公开(公告)号：US20200066650A1

公开(公告)日：2020-02-27

申请号：US16534051

申请日：2019-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun Ho YOON ,  Yoon Sung KIM ,  Yun Hee KIM ,  Byung Moon BAE ,  Hyun Su SIM ,  Jung Ho CHOI

IPC: H01L23/544 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate which includes a semiconductor chip region and a scribe line region surrounding the semiconductor chip region; an insulating film arranged over the semiconductor chip region and the scribe line region on the substrate, and including a first surface, a second surface opposite to the first surface, a third surface connecting the first surface and the second surface, and a fourth surface opposite to the third surface and connecting the first surface and the second surface; and an opening portion formed on the second surface of the insulating film and the fourth surface of the insulating film to expose the substrate, wherein the opening portion is formed in the scribe line region, and the first surface of the insulating film and the third surface of the insulating film do not include an opening portion which expose the substrate.

公开(公告)号：US20190273130A1

公开(公告)日：2019-09-05

申请号：US16419153

申请日：2019-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ho YOON ,  Won Chul LEE ,  Sung Yeon KIM ,  Jae Hong PARK ,  Chan Hoon PARK ,  Yong Moon JANG ,  Je Woo HAN

IPC: H01L49/02 ,  H01L21/283 ,  H01L21/033 ,  H01L21/311

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

公开(公告)号：US20180108728A1

公开(公告)日：2018-04-19

申请号：US15626271

申请日：2017-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ho YOON ,  Won Chul LEE ,  Sung Yeon KIM ,  Jae Hong PARK ,  Chan Hoon PARK ,  Yong Moon JANG ,  Je Woo HAN

IPC: H01L49/02 ,  H01L21/311 ,  H01L21/283

CPC classification number: H01L28/60 ,  H01L21/283 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31144

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.