公开(公告)号：US20190273130A1

公开(公告)日：2019-09-05

申请号：US16419153

申请日：2019-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ho YOON ,  Won Chul LEE ,  Sung Yeon KIM ,  Jae Hong PARK ,  Chan Hoon PARK ,  Yong Moon JANG ,  Je Woo HAN

IPC: H01L49/02 ,  H01L21/283 ,  H01L21/033 ,  H01L21/311

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

公开(公告)号：US20180108728A1

公开(公告)日：2018-04-19

申请号：US15626271

申请日：2017-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Ho YOON ,  Won Chul LEE ,  Sung Yeon KIM ,  Jae Hong PARK ,  Chan Hoon PARK ,  Yong Moon JANG ,  Je Woo HAN

IPC: H01L49/02 ,  H01L21/311 ,  H01L21/283

CPC classification number: H01L28/60 ,  H01L21/283 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/31144

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.